Fluorinated Amidinate Compounds for CVD Thin-Film Vaporization
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Solution Overview
Problem
Existing amidinate compounds and their dimer counterparts used in thin-film formation via CVD methods do not adequately meet the requirements of high vapor pressure, low melting point, and high productivity for producing high-quality thin-films.
Innovation Solution
Development of amidinate compounds and their dimer forms, specifically designed with ligands having a specific structure, which include alkyl groups and fluorine substitution to enhance vapor pressure and thermal stability, thereby facilitating the production of high-quality thin-films with improved productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional amidinate compounds and dimer compounds are used as thin-film forming raw materials, then the production process can proceed with standard materials, but the vapor pressure is insufficient and melting points are too high, limiting productivity and film quality
Solution Approach 1:
The patent modifies the physical and chemical parameters of the amidinate compound by changing the ligand structure - specifically introducing fluorine atoms at specific positions (R1 and R2) and controlling alkyl group lengths (1-5 carbon atoms). These parameter changes result in compounds with higher vapor pressures and lower melting points, enabling better vaporization characteristics for CVD/ALD processes while maintaining thermal stability for high-quality thin-film formation
Solution Approach 2:
The patent applies local quality by making specific substitutions at particular positions in the ligand structure. The fluorine atoms are introduced at R1 and R2 positions, while R3 can be hydrogen or alkyl groups. This localized modification approach optimizes vapor pressure and melting point without compromising the overall thermal stability and film-forming capability of the compound
2Productivity
If the compound structure is modified to increase vapor pressure and decrease melting point, then productivity improves, but thermal stability may be compromised
Solution Approach 1:
The patent carefully balances parameter changes by controlling the carbon atom count in alkyl groups (1-5 atoms) and specifying fluorine substitution positions. This controlled modification achieves higher vapor pressure and lower melting point for improved productivity while the moderate alkyl group sizes and fluorine substitution patterns maintain adequate thermal stability for high-quality thin-film formation
Solution Approach 2:
The patent creates composite molecular structures combining fluorinated ligands with metal centers (M representing various metals). The ligand structure comprises specific alkyl groups with fluorine substitution, creating a composite material that integrates the volatility benefits of fluorinated compounds with the thermal stability of metal-amidinate complexes, achieving both high vapor pressure and thermal stability simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new amidinate compounds and their dimers exhibit higher vapor pressures and lower melting points compared to traditional compounds, enabling the production of high-quality thin-films with enhanced productivity, particularly suitable for CVD and ALD methods.
Implementation Method 1
vaporizing a thin-film forming raw material material containing the compound; introducing vapor containing the amidinate compound represented by the general formula (1) or the dimer compound thereof, which has been vaporized
Implementation Method 2
subjecting the compound to decomposition and/or a chemical reaction to form a thin-film containing a metal atom or a silicon atom on a surface of a substrate
Implementation Method 3
subjecting the compound to decomposition and/or a chemical reaction to form a thin-film
Data Source
AI summary
The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material:where R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R1 to R3 is substituted with a fluorine atom.