Fluorinated Beta-Diketiminate Metal Complex for ALD Vapor Pressure
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Solution Overview
Problem
Existing β-diketiminate metal complexes used in thin-film formation have insufficient vapor pressure, hindering the productivity of high-quality metal-containing thin-films, particularly in chemical vapor deposition methods like ALD.
Innovation Solution
A β-diketiminate ligand with a fluorine-containing group at specific positions is introduced to enhance vapor pressure and melting point, enabling the formation of high-quality metal-containing thin-films with improved productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional β-diketiminate metal complex is used as a thin-film forming raw material, then the thin-film can be formed with good quality, but the vapor pressure is insufficient which reduces productivity
Solution Approach 1:
The invention changes the chemical structure parameters of the β-diketiminate ligand by introducing fluorine-containing groups at specific positions (R2, R3, or R4). This structural modification fundamentally alters the physical properties of the metal complex, specifically increasing vapor pressure while maintaining thin-film formation capability. The fluorine substitution changes molecular weight, intermolecular forces, and thermal stability, enabling the compound to volatilize more effectively for CVD/ALD processes.
Solution Approach 2:
The invention applies local quality by selectively placing fluorine-containing groups at specific positions (R2, R3, or R4) of the β-diketiminate ligand rather than uniformly modifying the entire structure. This localized modification allows precise control over vapor pressure and thermal properties while preserving the essential coordination chemistry and thin-film forming characteristics of the original complex.
2Productivity
If the vapor pressure of the raw material is increased to improve productivity, then productivity improves, but the melting point may increase which complicates handling
Solution Approach 1:
The fluorine-containing group substitution changes multiple physical parameters simultaneously. The introduction of fluorine atoms increases vapor pressure through reduced intermolecular forces and lower molecular weight effects, while the specific positioning and type of fluorine groups (CF3, F, etc.) can be tuned to control melting point and thermal stability, achieving an optimal balance for processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The fluorine-modified β-diketiminate metal complex achieves high vapor pressure and low melting point, facilitating the formation of high-quality metal-containing thin-films with enhanced productivity using CVD methods, particularly ALD.
Implementation Method 1
introducing a raw material gas obtained by vaporizing the above-mentioned thin-film forming raw material into a treatment atmosphere
Implementation Method 2
subjecting the compound in the raw material gas to decomposition and/or a chemical reaction, to thereby form a metal-containing thin-film on a surface of the substrate
Data Source
AI summary
Provided is a thin-film forming raw material containing a compound represented by the following formula (1):in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.