Fluorinated Copolymer Resist Inhibiting Pattern Collapse

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Solution Overview

Problem

Resist pattern collapse occurs during the formation of resist patterns using conventional positive resists, such as those containing α-methylstyrene-methyl α-chloroacrylate copolymers, which are not sufficient in inhibiting pattern collapse during irradiation and development treatments.

Innovation Solution

A polymer comprising specific monomer units with fluorine atoms, including a monomer unit (A) and (B), which undergo main chain scission upon irradiation, is used to inhibit resist pattern collapse, with a weight average molecular weight between 10,000 and 150,000 and a molecular weight distribution of 1.30 to 1.60, along with a development process using a developer with a fluorine-containing solvent content of 60 vol% or more.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional positive resist (α-methylstyrene-methyl α-chloroacrylate copolymer) is used, then high sensitivity is achieved, but resist pattern collapse occurs during development and rinse treatments

Engineering Contradiction:
Improveresist pattern stabilityVSAvoidpattern collapse
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent introduces fluorine atoms into the polymer structure by replacing hydrogen atoms with fluorine atoms in specific positions (R1, R2, R5, R6 groups). This chemical parameter change fundamentally alters the polymer's properties: fluorine atoms increase liquid repellency and reduce surface energy, preventing developer and rinse liquid from wetting the resist pattern surfaces, thereby eliminating capillary forces that cause pattern collapse during development and rinsing

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite polymer structure by copolymerizing fluorinated monomers with conventional resist monomers (α-methylstyrene and/or methyl α-chloroacrylate). This composite approach combines the high sensitivity and main chain scission properties of conventional positive resists with the liquid repellency and pattern stability provided by fluorinated groups, achieving both high sensitivity and pattern collapse resistance simultaneously

Inventive Principle:
Principle #40Composite materials

2Reliability

If fluorine-containing polymer is used to inhibit pattern collapse, then pattern stability is improved, but sensitivity may be reduced

Engineering Contradiction:
Improveresist pattern stabilityVSAvoidsensitivity
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

The patent applies fluorine atoms locally at specific positions on the polymer chain (R1, R2, R5, R6 groups) rather than throughout the entire structure. This localized fluorination provides sufficient liquid repellency for pattern stability while preserving the bulk polymer's main chain scission properties and sensitivity. The fluorinated groups act as surface-modifying entities that do not interfere with the radiation response of the polymer backbone

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent optimizes the fluorine content and molecular weight parameters to balance pattern stability and sensitivity. By controlling the degree of fluorination and selecting appropriate molecular weights, the patent achieves a parameter regime where both pattern collapse resistance and high sensitivity are simultaneously realized, transforming the trade-off into a synergistic relationship

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The polymer effectively inhibits resist pattern collapse and enhances patterning efficiency by improving main chain scission properties and liquid repellency, allowing for clear and efficient resist pattern formation.

Implementation Method 1

Polymers that display increased solubility in a developer after undergoing main chain scission through irradiation with ionizing radiation, such as an electron beam, or short-wavelength light, such as ultraviolet light

Methodology Applied
Scientific EffectMain chain scission: Photodissociation

Implementation Method 2

at least one of the monomer units (A) and (B) includes at least one fluorine atom... the polymer... can sufficiently inhibit resist pattern collapse when used as a resist

Methodology Applied
Scientific EffectLiquid repellency: Hydrophobe

Data Source

PatentEP3409700B1Copolymer, positive resist composition, and resist pattern forming method
Publication Date: 2022.02.02 ZEON CORP
  • EP3409700B1 patent drawing
  • EP3409700B1 patent drawing
  • EP3409700B1 patent drawing

AI summary

A polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, wherein at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom. In the formulae, R1 is a chlorine atom, a fluorine atom, or a fluorine atom-substituted alkyl group, R2 is an unsubstituted alkyl group or a fluorine atom-substituted alkyl group, R3 to R6, R8, and R9 are each a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R7 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of at least 0 and not more than 5, and p + q = 5.