Fluorinated Organic Film Composition for EBR Hump Suppression
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Solution Overview
Problem
Existing organic films used in semiconductor manufacturing face challenges in achieving uniform film formation on complex substrates, suppressing humps during the EBR process, and maintaining excellent process margins, especially in multilayer resist processes.
Innovation Solution
A composition for forming an organic film is developed, comprising a material for forming an organic film, a polymer with a specific repeating unit containing fluorine structures, and a solvent. This composition enhances in-plane uniformity, filling property, and suppresses humps during the EBR process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional organic films are used for multilayer resist processes, then basic film formation is achieved, but in-plane uniformity and filling property are insufficient
Solution Approach 1:
The patent uses a composite polymer system consisting of a novolak resin (material A) and a fluorine-containing polymer (material B). The novolak provides good adhesion and basic film formation, while the fluorine-containing polymer specifically addresses in-plane uniformity and filling property. This composite approach allows simultaneous achievement of multiple performance requirements that cannot be met by a single polymer.
Solution Approach 2:
The fluorine-containing polymer is specifically designed to localize its function in improving in-plane uniformity and filling property in critical areas. The fluorine atoms create localized regions of improved flow and leveling characteristics during the EBR process, while the novolak matrix maintains overall structural integrity and adhesion.
2Ease of operation
If standard organic film compositions are used, then general coatability is achieved, but humps are generated during the EBR process
Solution Approach 1:
The patent modifies the chemical composition parameters by introducing fluorine-containing functional groups into the polymer structure. The fluorine atoms change the surface energy and flow characteristics of the organic film, enabling better leveling during the EBR process and suppressing hump formation while maintaining overall coatability.
3Reliability
If existing organic film materials are used, then basic etching resistance is achieved, but process margins are insufficient
Solution Approach 1:
The composite polymer system provides both etching resistance (from the novolak matrix) and improved process margins (from the fluorine-containing polymer's contribution to film uniformity and stability). This allows the organic film to perform reliably across a broader range of processing conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves excellent film-formability, filling property, and hump suppression, making it suitable for multilayer resist processes and semiconductor device manufacturing, with improved coatability and process margins.
Implementation Method 1
a polymer having a repeating unit represented by the following general formula (1)... containing fluorine structures... enhances in-plane uniformity, filling property, and suppresses humps during the EBR process
Data Source
AI summary
The present invention is a composition for forming an organic film, containing: (A) a material for forming an organic film; (B) a polymer having a repeating unit represented by the following general formula (1); and (C) a solvent, where W1 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms and having one or more fluorine-containing structures represented by the following formulae (2), and W2 represents a saturated or unsaturated divalent organic group having 2 to 50 carbon atoms. This can provide: a composition for forming an organic film which is excellent in film-formability on a substrate and filling property, suppresses humps in an EBR process, and has an excellent process margin when used for an organic film for a multilayer resist process; a method for forming an organic film, using the composition; a patterning process; and a polymer to be contained in the composition for forming an organic film.