Fluorinated Gate Dielectric Surface Modification for OFET Adhesion
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Solution Overview
Problem
Conventional organic electronic devices, such as OFETs, face challenges with low surface energy of fluorinated gate dielectric layers, leading to poor adhesion of further device layers and de-wetting issues at bank structures, necessitating a method to increase surface energy and improve adhesion without compromising process integration.
Innovation Solution
A surface treatment process involving a solvent blend of aliphatic or aromatic alcohols and aliphatic esters or ketones is applied to fluorinated insulating structures, specifically dielectric layers and bank structures, to enhance surface energy and adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If fluorinated gate dielectric layers are used to ensure solvent orthogonality, then the gate dielectric layer is compatible with OSC layer deposition, but the surface energy becomes too low causing poor adhesion of subsequent layers
Solution Approach 1:
The patent applies preliminary surface treatment to the fluorinated gate dielectric layer using plasma treatment or chemical treatment before depositing subsequent layers. This preliminary action modifies the surface energy and creates functional groups that enhance adhesion, while the bulk fluorinated material remains intact to maintain solvent orthogonality with the OSC layer.
Solution Approach 2:
The patent applies different treatments to different regions or aspects of the gate dielectric layer. The surface is treated to increase surface energy and create adhesion-promoting functional groups, while the bulk material retains its fluorinated properties for solvent compatibility. This local differentiation resolves the contradiction between surface adhesion requirements and bulk solvent orthogonality.
2Use of energy by moving object
If plasma treatment or chemical treatment is applied to increase surface energy, then adhesion improves, but process integration becomes complex
Solution Approach 1:
The patent employs simple, well-established plasma treatment or chemical treatment processes that are already integrated into conventional organic electronic device fabrication. These treatments use readily available equipment and chemicals, avoiding the need for complex or proprietary processing steps, thereby maintaining process integration simplicity while effectively increasing surface energy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment effectively increases the surface energy of dielectric structures, improving the adhesion of subsequent layers and reducing de-wetting problems, thereby enhancing the performance and integration of organic electronic devices.
Implementation Method 1
exposing the surface of the dielectric structure, or specific parts of said surface, to a solvent blend comprising a first solvent selected from the group consisting of aliphatic or aromatic alcohols, and a second solvent selected from the group consisting of aliphatic esters and aliphatic ketones
Data Source
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AI summary
The invention relates to a process of modifying the surface energy of dielectric structures, like for example dielectric layers or bank structures, organic electronic (OE) devices, more specifically in organic field effect transistors (OFETs).