Fluorinated Propyne Dry Etching Agent for Low GWP Semiconductor Processing
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Solution Overview
Problem
Current dry etching agents for semiconductor processing, such as PFC and HFC compounds, have high global warming potential and are not economically viable, and existing alternatives either contain high-GWP decomposition products or are difficult to produce, while also lacking directivity in anisotropic etching.
Innovation Solution
A dry etching agent comprising a fluorinated propyne (CF3C≡CX) combined with oxygen-containing, halogen, or inert gases, which allows for anisotropic etching with reduced environmental impact and high cost efficiency, using specific gas ratios to optimize etching performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If PFC and HFC gases are used as etching agents, then etching rate of SiO2 is improved, but global warming potential increases
Solution Approach 1:
The invention changes the chemical composition parameters of the etching gas from traditional PFC/HFC compounds to fluorinated propyne compounds, which have different molecular structures and environmental properties. This parameter change maintains etching effectiveness while reducing global warming potential, as fluorinated propynes have lower GWP values compared to conventional etching gases.
Solution Approach 2:
The invention uses composite gas mixtures containing fluorinated propyne combined with other gases (such as oxygen, nitrogen, or hydrogen) to achieve the desired etching performance. This composite approach allows optimization of both etching rate and environmental impact by combining the advantages of different gas components.
2Productivity
If perfluoroketone is used as etching gas, then etching capability is improved, but decomposition products contain high-GWP compounds
Solution Approach 1:
The invention converts the potential harm of decomposition products into a benefit by selecting fluorinated propyne compounds that decompose into lower-GWP substances. The molecular structure of fluorinated propynes ensures that even when decomposed, the resulting fragments have reduced global warming potential compared to perfluoroketone decomposition products.
3Object-affected harmful factors
If hydrofluoro ether is used as etching gas, then environmental impact is reduced, but manufacturing difficulty increases
Solution Approach 1:
The invention employs fluorinated propyne compounds that can be produced through established industrial chemistry routes, making them more economically viable than hydrofluoro ethers. The molecular structure of fluorinated propynes allows for simpler and more cost-effective synthesis methods, reducing manufacturing difficulty while maintaining environmental benefits.
4Manufacturing precision
If conventional etching agents are used, then isotropic etching is achieved, but anisotropic etching directivity is lacking
Solution Approach 1:
The invention achieves different etching characteristics in different directions by utilizing the specific chemical properties of fluorinated propyne. The molecular structure and reactivity of these compounds enable selective etching behavior that provides both isotropic uniformity and anisotropic directivity, allowing precise control over etching patterns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a wide process window for semiconductor processing with high etching selectivity and aspect ratio, reducing environmental impact and eliminating the need for special equipment, while maintaining high etching efficiency and productivity.
Implementation Method 1
The dry etching process is a technique in which a fine pattern is formed on a molecule-by-molecule basis on a material surface by generation of a plasma in the vacuum
Implementation Method 2
selectively etching at least one kind of silicon material selected from the group consisting of silicon dioxide, silicon nitride and silicon carbide by the generated plasma gas
Data Source
AI summary
A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C≡CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.