Fluorinated Resin for High-Resolution EUV Lithography

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Solution Overview

Problem

Current chemically amplified resist compositions for semiconductor microfabrication, especially in EUV lithography and electron beam lithography, face challenges in achieving high resolution and suitable pattern profiles.

Innovation Solution

A novel resin with specific structural units, including perfluoroalkyl groups and acid-labile groups, is developed, which forms the basis of a chemically amplified resist composition that becomes soluble in aqueous alkali solutions upon acid action, enabling precise pattern formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional chemically amplified resist compositions are used, then the basic lithography process can be performed, but high resolution and good pattern profile cannot be achieved

Engineering Contradiction:
Improvepattern resolutionVSAvoidpattern profile quality
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent introduces a novel resin with specific chemical structure parameters - containing fluorinated groups (CF3) and carboxylic acid groups at defined ratios (0.1-10 mmol/g). These parameter changes in the resin composition enable simultaneous achievement of high resolution and good pattern profile by modifying the chemical amplification behavior and solubility characteristics of the resist system.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite resist composition by combining the novel fluorinated resin with specific solvents and additives. The composite material integrates multiple functional components: the fluorinated resin provides resolution enhancement, the carboxylic acid groups contribute to pattern profile control, and the solvent system optimizes coating and development properties, achieving both high resolution and reliable pattern formation.

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If novel resin structures are introduced to improve pattern quality, then manufacturing precision increases, but device complexity increases

Engineering Contradiction:
Improvepattern resolutionVSAvoidresin structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies local quality by introducing fluorinated groups and carboxylic acid groups at specific locations within the resin molecular structure. Rather than uniformly complexing the entire resin structure, the functional groups are localized at controlled densities (0.1-10 mmol/g), providing the necessary chemical functionality for high resolution and good pattern profile while maintaining overall structural simplicity and manufacturability.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resin composition allows for the creation of high-resolution patterns suitable for EUV and electron beam lithography, improving pattern profile quality and process efficiency.

Implementation Method 1

a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid

Methodology Applied
Scientific EffectAcid-labile group hydrolysis: Hydrolysis

Data Source

PatentUS8110336B2Resin and chemically amplified resist composition comprising the same
Publication Date: 2012.02.07 SUMITOMO CHEM CO LTD
  • US8110336B2 patent drawing
  • US8110336B2 patent drawing
  • US8110336B2 patent drawing

AI summary

A resin comprising a structural unit represented by the formula (I):wherein Q1 and Q2 represent a fluorine atom etc., U represents a C1-C20 divalent hydrocarbon group in which one or more —CH2— may be replaced by —O— etc., X1 represents —O—CO— etc., and A+ represents an organic counter ion.