Fluorinated Resist Underlayer Composition for Defect-Free EUV Coating

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Solution Overview

Problem

In advanced lithography processes, such as those using EUV exposure, forming a uniform resist underlayer film without defects is challenging due to substrate influences and polymer properties, leading to issues like pinholes, agglomeration, and poor adhesion during resist pattern formation.

Innovation Solution

A composition for forming a resist underlayer film is developed, comprising a polymer with specific unit structures represented by formulas (1) and (2), a solvent, and optional components like an acid generator and crosslinking agent, which enhances coating properties and adhesion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of moving object

If a thin resist underlayer film is formed for EUV exposure, then the line width of the resist pattern can be reduced to 32 nm or less, but pinholes, agglomeration, and other defects occur due to substrate surface influence and polymer properties

Engineering Contradiction:
Improveline width of resist patternVSAvoiduniformity of resist underlayer film
Core Design Contradiction:
Length of moving objectVSManufacturing precision

Solution Approach 1:

The patent modifies the chemical composition parameters of the resist underlayer film by incorporating specific fluorinated polymer structures (containing CF3 groups and fluorinated aromatic rings) and controlling the ratio of polymer to solvent (5-50 mass%). These parameter changes enable the formation of uniform thin films at 32 nm line width by adjusting molecular weight, functional group distribution, and intermolecular forces to prevent agglomeration and pinhole formation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite material system combining fluorinated polymer chains with specific solvent molecules (alcohols, esters, or ketones). This composite composition achieves synergistic effects where the fluorinated polymer provides adhesion and the solvent controls film formation dynamics, enabling defect-free thin film deposition at advanced lithography dimensions

Inventive Principle:
Principle #40Composite materials

2Strength

If a resist underlayer film is formed to improve adhesion during resist pattern formation, then adhesion is enhanced, but coating uniformity and film quality deteriorate due to substrate surface influence

Engineering Contradiction:
Improveadhesion of resist patternVSAvoidcoating uniformity of resist underlayer film
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent implements local quality by designing the polymer structure with specific functional groups (fluorinated aromatic rings and CF3 groups) that provide localized adhesion enhancement at the substrate interface, while the overall polymer chain maintains properties that ensure uniform coating. The halogenated antireflection components are strategically positioned to provide local adhesion without compromising global film uniformity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent optimizes the molecular weight parameter of the fluorinated polymer (5,000-100,000 g/mol) and the concentration parameter (5-50 mass% polymer in solvent) to achieve a balance between adhesion strength and coating uniformity. These parameter adjustments ensure that the film forms uniformly across the substrate while maintaining sufficient adhesion for resist pattern formation

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20250036027A1Composition for forming resist underlayer film
Publication Date: 2025.01.30 NISSAN CHEM CORP
  • US20250036027A1 patent drawing
  • US20250036027A1 patent drawing
  • US20250036027A1 patent drawing

AI summary

A composition for forming a resist underlayer film, the composition including: a polymer containing a unit structure (A) represented by the following formula (1); and a solvent:wherein, in the formula (1), R1 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms; and L1 represents a monovalent organic group selected from an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, and a monovalent heterocyclic group, where at least one hydrogen atom which the alkyl group, the aryl group, and the monovalent heterocyclic group have is substituted with a halogen atom, and where at least one hydrogen atom which the alkyl group, the aryl group, and the monovalent heterocyclic group have may be substituted with a hydroxy group.