Fluorine-Catching Layer Structure for Via Etch Reliability
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Solution Overview
Problem
The manufacturing and integration of semiconductor devices are complex and prone to deficiencies due to the miniaturization of these devices, leading to challenges in maintaining the electrical characteristics of conductive features.
Innovation Solution
A semiconductor device structure is developed that includes a fluorine-catching layer between two dielectric layers, with a conductive via structure penetrating through these layers. The fluorine-catching layer, which can include materials like CaSiO2 or CaF2, reacts with fluorine-containing gases used in etching processes, reducing fluorine contamination and maintaining the integrity of conductive features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If fluorine-containing gases are used in etching processes to manufacture semiconductor devices, then etching efficiency is improved, but fluorine contamination occurs in conductive features compromising electrical characteristics
Solution Approach 1:
A fluorine-catching layer is introduced as an intermediary between the etching process and the conductive features. This layer selectively captures fluorine from fluorine-containing gases during etching, preventing fluorine contamination of conductive features while maintaining etching efficiency. The fluorine-catching layer acts as a mediator that protects sensitive conductive structures from harmful fluorine exposure.
Solution Approach 2:
The harmful fluorine byproduct of etching is converted into a beneficial protective mechanism. The fluorine-catching layer reacts with fluorine to form stable compounds, effectively transforming the harmful fluorine contamination into a protective barrier that prevents fluorine from reaching conductive features. This converts the etching waste into a useful protective function.
2Length of moving object
If semiconductor devices are miniaturized to reduce size, then device integration and functionality are improved, but manufacturing complexity and process deficiencies increase
Solution Approach 1:
The fluorine-catching layer is formed in advance before conductive features are created, establishing a protective barrier beforehand. This preliminary action prevents fluorine contamination issues that would otherwise arise during subsequent etching processes, simplifying the overall manufacturing by pre-solving a potential contamination problem.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a fluorine-catching layer effectively reduces fluorine contamination in conductive features, ensuring that the electrical characteristics of these features are not compromised, thereby enhancing the performance, reliability, and yield of semiconductor device structures.
Implementation Method 1
The fluorine-catching layer, which can include materials like CaSiO2 or CaF2, reacts with fluorine-containing gases used in etching processes, reducing fluorine contamination
Data Source
AI summary
The present disclosure provides a semiconductor device structure with a fluorine-catching layer. The semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a fluorine-catching layer disposed over the second dielectric layer, and a third dielectric layer disposed over the fluorine-catching layer. The semiconductor device structure further includes a conductive via structure penetrating through the third dielectric layer, the fluorine-catching layer, and the second dielectric layer to contact the first dielectric layer.