Fluorine-Graded AlGaN HEMT Structure for Trap Suppression
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Solution Overview
Problem
Semiconductor devices face instability and current collapse due to high electric fields, leading to changes in characteristics and increased on-resistance, particularly at the end of the drain electrode, where traps are easily generated.
Innovation Solution
Incorporating a semiconductor device design with a second semiconductor region having distinct fluorine concentrations in different regions, where a higher fluorine concentration in the first region suppresses trap generation and maintains stable characteristics, while a lower or zero fluorine concentration in the second region achieves low on-resistance, and using a mask to selectively introduce fluorine during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluorine is introduced into the barrier layer to suppress trap generation, then reliability improves, but on-resistance increases
Solution Approach 1:
The patent applies local quality by creating distinct regions with different fluorine concentrations within the semiconductor device. Specifically, a first region near the drain electrode has high fluorine concentration to suppress trap generation, while a second region has low or no fluorine concentration to maintain low on-resistance. This spatial differentiation of material properties resolves the contradiction between reliability improvement and resistance increase.
Solution Approach 2:
The semiconductor device is segmented into multiple regions with different fluorine concentrations. The barrier layer is divided into a first region (high fluorine) and a second region (low/no fluorine), allowing each segment to fulfill different functional requirements - one for trap suppression and another for low resistance operation.
2Device complexity
If high electric field is concentrated near drain electrode to improve device compactness, then device size reduces, but trap generation increases
Solution Approach 1:
The patent uses local quality by introducing fluorine specifically in the first region near the drain electrode where high electric field concentration occurs. This localized modification suppresses trap generation in the critical high-field region without requiring changes to the overall device geometry, thus maintaining compact size while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses trap generation and maintains stable characteristics even under high electric fields, reducing current collapse and achieving lower on-resistance, thereby enhancing the overall performance and stability of the semiconductor device.
Implementation Method 1
introducing fluorine into a barrier layer of a HEMT from a dielectric layer
Data Source
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AI summary
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, and a second semiconductor region. The first to third electrodes extend in the first direction. A second direction from the first electrode to the second electrode is perpendicular to the first direction. The first semiconductor region includes Alx1Ga1-x1N (0 ≤ x1 < 1). The first semiconductor region includes first to fifth partial regions. A third direction from the first partial region to the first electrode crosses a plane including the first and second directions. A direction from the second partial region to the second electrode, and a direction from the third partial region to the third electrode are along the third direction. The second semiconductor region includes Alx2Ga1-x2N (0 < x2 < 1, x1 < x2). The second semiconductor region includes first and second semiconductor portions.