Fluorine-Pretreated Process Vessel for Cleaner Semiconductor Film Deposition
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Solution Overview
Problem
Existing methods for forming films on semiconductor substrates, such as silicon nitride films, often result in poor film quality due to inadequate surface treatment and removal of residual gases.
Innovation Solution
A method involving the supply of a fluorine-containing gas to a process vessel, followed by exhaust while maintaining fluorine adherence, and then forming a film using a film-forming gas within the fluorine-adhered vessel.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional film formation methods are used without fluorine surface treatment, then the process is simpler and faster, but the film quality is poor with high impurity content
Solution Approach 1:
The method applies fluorine surface treatment to the process vessel wall before film formation. This preliminary action modifies the surface properties of the vessel, creating a fluorine-adhered state that prevents impurity contamination during subsequent film deposition, thereby improving film quality without adding complex equipment
Solution Approach 2:
The method changes the chemical state of the process vessel surface by introducing fluorine-containing gas. This parameter change (from clean/oxidized surface to fluorine-adhered surface) fundamentally alters the surface properties to prevent impurity incorporation in the formed film, achieving high-quality films through chemical modification rather than physical means
2Manufacturing precision
If fluorine-containing gas is supplied and exhaust is performed while maintaining fluorine adherence, then surface treatment effectiveness is improved, but processing time increases
Solution Approach 1:
The method supplies fluorine-containing gas at a concentration higher than normally required for simple cleaning, and maintains it for a specific duration to ensure complete fluorine adherence to the process vessel surface. This excessive action ensures thorough surface treatment, creating a robust fluorine layer that effectively prevents impurity contamination during film formation
Solution Approach 2:
The fluorine-containing gas is supplied continuously for a predetermined period to ensure complete and uniform fluorine adherence across the entire process vessel surface. This continuous action maintains the fluorine-adhered state throughout the surface treatment phase, ensuring consistent surface properties before film deposition begins
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the quality of the formed film by ensuring effective surface treatment and removal of residual gases, resulting in higher-quality films with reduced impurities.
Implementation Method 1
maintaining a state in which fluorine is adhered to the interior of the process vessel
Implementation Method 2
forming a film on a substrate by supplying a film-forming gas to the substrate accommodated in the interior of the process vessel
Data Source
AI summary
There is included (a) supplying a fluorine-containing gas to an interior of a process vessel; (b) exhausting the fluorine-containing gas from the interior of the process vessel while maintaining a state in which fluorine is adhered to the interior of the process vessel; and (c) forming a film on a substrate by supplying a film-forming gas to the substrate accommodated in the interior of the process vessel to which the fluorine is adhered.