Fluorine-Containing Silicon Compounds for Resist Pattern Integrity
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Solution Overview
Problem
In the semiconductor manufacturing process, single layer positive resist compositions face challenges with pattern collapse due to swelling and inadequate etching resistance, especially when using fluorine-rich resins as etching masks, which fail to provide sufficient resistance to oxygen-reactive etching.
Innovation Solution
Development of fluorine-containing silicon compounds and silicone resins with specific phenol-like acidity, represented by general formulas (1) and (2), which are used in a bilayer resist process to minimize pattern collapse and enhance etching resistance by incorporating recurring units in the resist composition, along with a photoacid generator and organic solvent.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If fluorine-rich resins are used as etching masks, then etching resistance is improved, but pattern collapse due to swelling occurs
Solution Approach 1:
The patent modifies the chemical composition parameters of the resin by controlling the fluorine content to be 5-30 mass% and the acid value to be 10-50 mg KOH/g. This parameter optimization resolves the contradiction by achieving sufficient etching resistance while minimizing swelling that causes pattern collapse.
Solution Approach 2:
The patent uses composite resin systems combining fluorinated cyclic carboxylic acid compounds with other resin components. This composite approach allows the material to exhibit both high etching resistance from the fluorinated groups and controlled swelling behavior through the synergistic interaction with other resin components.
2Manufacturing precision
If resist coating thickness is reduced to achieve finer patterns, then resolution is improved, but etching resistance becomes insufficient
Solution Approach 1:
The patent optimizes the acid value parameter to 10-50 mg KOH/g, which enhances the etching resistance of thinner resist coatings. This parameter control allows the resist to maintain adequate etching protection even when the coating thickness is reduced to achieve finer pattern resolution.
Solution Approach 2:
The patent introduces fluorinated cyclic carboxylic acid compounds with specific local chemical structures that provide concentrated etching resistance at the resist-substrate interface. This local enhancement of protective properties allows thinner overall coating while maintaining sufficient etching resistance.
Data Source
AI summary
Fluorine-containing silicon compounds having the general formula (1):wherein X1, X2, and X3 each are hydrogen, hydroxyl, halogen, a straight, branched or cyclic alkoxy group of 1 to 6 carbon atoms, or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, Y is a divalent organic group, R1 and R2 are each independently hydrogen or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, or R1 and R2 may bond together to form a ring with the carbon atom to which they are attached silicone resins obtained from the compounds of formula (1) has an appropriate acidity to enable formation of a finer pattern while minimizing the pattern collapse by swelling when used in a resist composition.