Fluorocarbon Polymer Barrier for Copper Wiring in TFT Panels
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In thin film transistor array panels, the diffusion of copper from the main wiring layer into the oxide semiconductor layer reduces the reliability of the device, and existing methods require additional capping films that increase costs and complexity.
Innovation Solution
A polymer layer, specifically formed from fluorocarbon, is interposed between the main wiring layer and the passivation layer to prevent oxidation of the copper and reduce the need for additional capping films, thereby enhancing reliability and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If copper is used in the main wiring layer to reduce resistance, then electrical conductivity is improved, but copper diffusion into the oxide semiconductor layer occurs causing reliability deterioration
Solution Approach 1:
A polymer layer is introduced as an intermediary barrier between the copper main wiring layer and the oxide semiconductor layer. This polymer layer prevents copper atoms from diffusing into the semiconductor layer while allowing the copper wiring to maintain its low-resistance electrical connection. The polymer layer thus mediates the harmful interaction between copper and oxide semiconductor.
Solution Approach 2:
The patent uses a composite structure combining copper (for electrical conductivity) with a polymer material (for diffusion prevention). This composite approach allows the system to simultaneously achieve low resistance through copper while preventing copper diffusion through the polymer barrier layer.
2Reliability
If additional capping films are added to prevent copper diffusion, then reliability is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The polymer layer serves multiple functions simultaneously: it acts as a diffusion barrier to prevent copper migration, provides planarization for subsequent processing steps, and offers mechanical protection. By combining multiple functions in a single layer, the patent reduces the number of separate capping films needed, thereby simplifying manufacturing while maintaining reliability.
Solution Approach 2:
The patent employs a thin polymer film that provides effective copper diffusion prevention without adding significant structural complexity. This thin film approach maintains device simplicity while achieving the protective function, avoiding the need for multiple thick capping layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymer layer effectively suppresses the oxidation of the copper in the main wiring layer, improving the reliability of the thin film transistor array panel and simplifying the manufacturing process by eliminating the need for additional capping films, thus reducing costs and increasing productivity.
Implementation Method 1
the polymer layer effectively suppresses the oxidation of the copper in the main wiring layer
Implementation Method 2
A method for manufacturing a thin film transistor array panel including a plasma-processing a main wiring layer is provided
Data Source
AI summary
A thin film transistor array panel is disclosed. The thin film transistor array panel may include a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, a data wiring layer disposed on the substrate and including a data line crossing the gate line, a source electrode connected to the data line and a drain electrode facing the source electrode, a polymer layer covering the source electrode and the drain electrode, and a passivation layer disposed on the polymer layer. The data wiring layer may include copper or a copper alloy and the polymer layer may include fluorocarbon.