Selective FOD Shielding Layers for Dense Semiconductor Packages
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Solution Overview
Problem
In semiconductor devices, especially in high-frequency applications like RF wireless communications, internal shielding structures required for reducing EMI and RFI often increase the package size due to the need for structural support, hindering the achievement of high-density electrical functionality.
Innovation Solution
The use of a Film Over Die (FOD) material for selective shielding, which provides mechanical and structural support for placing shielding layers in optimal locations without the need for additional space, allowing for high-density electrical functionality by attaching shielding layers directly to adjacent components using a penetrable thin film or polymer material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If internal shielding structures are added to reduce EMI and RFI, then electromagnetic interference protection is improved, but package size increases due to required structural support space
Solution Approach 1:
The patent employs a thin film FOD material as a flexible shielding structure that can be conformally deposited over existing components and circuitry. This thin film approach provides electromagnetic shielding without requiring the thick rigid structures of traditional shielding, thereby reducing the volume occupied by shielding elements while maintaining EMI/RFI protection effectiveness.
Solution Approach 2:
The patent transitions from traditional planar or bulk shielding structures to a conformal thin-film shielding approach that utilizes the vertical dimension and surface area of existing components. By depositing the FOD material conformally over components, the shielding is integrated into the existing three-dimensional layout without requiring additional lateral space, thus maintaining high device density while providing electromagnetic protection.
2Object-affected harmful factors
If discrete shielding structures are placed around components, then electromagnetic shielding is improved, but device density decreases due to increased space requirements
Solution Approach 1:
The patent merges the shielding function with the existing component structures by conformally depositing the FOD material directly over components and circuitry. This integration eliminates the need for separate discrete shielding structures, as the shielding function is combined with the existing device layout. The thin film shielding becomes part of the overall device architecture rather than an add-on element, thereby maintaining high device density while providing comprehensive electromagnetic protection.
Solution Approach 2:
The FOD material serves multiple functions simultaneously: it provides electromagnetic shielding, acts as a protective coating, and can serve as an insulating layer. This multi-functionality eliminates the need for separate shielding structures and other protective elements, allowing the same material layer to fulfill multiple roles and thereby maintaining high device density while providing comprehensive protection against inter-device interference.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective reduction of EMI and RFI while maintaining high-density electrical functionality and small size, as the FOD material supports shielding layers in precise locations, optimizing their placement and reducing interference without increasing package size.
Implementation Method 1
The internal shielding structures require space and increase the overall size of the package... the FOD material supports shielding layers in precise locations
Data Source
AI summary
A semiconductor device has a substrate and first electrical component disposed over the substrate. A first shielding layer is disposed over the first electrical component. A first film material is disposed between the first electrical component and first shielding layer for selective attachment of the first shielding layer. A second electrical component can be disposed over the substrate. A second shielding layer is disposed over the second electrical component, and a second film material disposed between the second electrical component and second shielding layer. A third shielding layer can be disposed over the first shielding layer, and a third film material disposed between the first shielding layer and third shielding layer. A fourth film material can be disposed between the first electrical component and substrate. An encapsulant is deposited over the first electrical component and substrate. A fourth shielding layer is formed over the encapsulant.