Folded Staircase Via Routing for Memory Breakdown Resistance

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Solution Overview

Problem

In memory devices, the interaction between dielectric and oxide materials in trenches leads to thinner material thickness, increasing the electric field and causing early breakdown, which affects via penetration and signal integrity.

Innovation Solution

The use of a folded staircase via routing configuration, where vias retain a quantity of dielectric material to penetrate trench walls while being isolated from contacts, and the second via is coupled with one of the contacts, maintaining sufficient thickness to prevent early breakdown and ensure electrical field constraints are met.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If vias penetrate trench walls to access word lines, then via penetration capability is improved, but material thickness decreases leading to early breakdown

Engineering Contradiction:
Improvevia penetration capabilityVSAvoidmaterial breakdown resistance
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The patent applies local quality by differentiating the treatment of dielectric material in different regions: in the folded staircase via routing regions, the dielectric material is preserved to maintain thickness and prevent breakdown, while in other regions it may be removed or thinned to enable via penetration. This localized differentiation allows simultaneous achievement of via penetration capability and material breakdown resistance.

Inventive Principle:
Principle #3Local quality

2Ease of manufacture

If dielectric material thickness is reduced to enable via penetration, then via formation is improved, but electric field strength increases causing early breakdown

Engineering Contradiction:
Improvevia formationVSAvoidelectric field induced breakdown
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent uses the folded staircase via routing configuration as an intermediary structure that indirectly enables via penetration without directly reducing dielectric material thickness. The routing path acts as a mediator that allows vias to reach word lines while the dielectric material maintains sufficient thickness to prevent breakdown, thus resolving the contradiction between via formation ease and breakdown resistance.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Device complexity

If conventional via routing is used, then manufacturing simplicity is improved, but signal integrity deteriorates due to early breakdown

Engineering Contradiction:
Improverouting configuration complexityVSAvoidsignal integrity
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent transitions from conventional planar via routing to a three-dimensional folded staircase configuration. This dimensional change allows vias to navigate around sensitive regions and access word lines without compromising dielectric material integrity, thereby maintaining signal integrity while achieving the necessary via connectivity through a different spatial dimension.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20240071902A1Folded staircase via routing for memory
Publication Date: 2024.02.29 MICRON TECHNOLOGY INC
  • US20240071902A1 patent drawing
  • US20240071902A1 patent drawing
  • US20240071902A1 patent drawing

AI summary

Methods, systems, and devices for folded staircase via routing for memory are described. For instance, a memory device may include a set of word lines extending in first direction. Additionally, the memory device may include a first via, a second via, and a third via in a trench that extends through at least a portion of the set of word lines The first via, the second via, and the third via may extend in a second direction different than the first, where the second via is between the first via and the third via along the first direction, and where the second via is coupled with a word line of the set of word lines. Additionally, the first via and the third via may be electrically isolated from the word line of the set of word lines.