Semiconductor Exhaust Foreline Heating for Ammonia-Chlorine Byproducts
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Solution Overview
Problem
Semiconductor processing tools face challenges with the use of halogen-containing and ammonia-containing gases, including corrosive byproduct deposition on exhaust forelines and non-uniform temperature and pressure issues affecting wafer processing uniformity, as well as heat management in remote plasma generators.
Innovation Solution
The implementation of a semiconductor processing tool with an exhaust foreline heating system maintaining temperatures above 100°C to prevent byproduct deposition, a baffle plate with controlled cross-sectional openings for uniform gas flow, and a conduit cooling system that adjusts its cooling state based on plasma flow to manage heat and prevent 'cold spots'.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If halogen-containing and ammonia-containing gases are used for film deposition, then manufacturing capability is improved, but corrosive byproduct deposition occurs on exhaust forelines
Solution Approach 1:
The patent applies parameter changes by heating the exhaust foreline to a temperature above the dew point of ammonium chloride (specifically maintaining temperatures above 100°C). This temperature parameter change prevents the condensation and deposition of corrosive byproducts on the exhaust foreline surfaces, thereby resolving the contradiction between maintaining film deposition capability and preventing corrosive deposition.
2Productivity
If remote plasma generator is used for gas activation, then process efficiency is improved, but heat management issues and cold spots occur in the chamber
Solution Approach 1:
The patent introduces a cooling system as an intermediary component that actively manages heat removal from the remote plasma generator and surrounding chamber regions. This cooling system acts as a mediator to control temperature distribution, preventing excessive heat accumulation and cold spot formation, thereby maintaining temperature uniformity while preserving the process efficiency benefits of remote plasma generation.
3Device complexity
If conventional exhaust systems are used, then device complexity is minimized, but byproduct deposition and equipment lifespan are adversely affected
Solution Approach 1:
The patent modifies the operational parameter of the exhaust system by implementing active heating of the exhaust foreline to temperatures above the dew point of byproducts. This parameter change prevents byproduct deposition without requiring complex additional components, thereby extending equipment lifespan while maintaining relatively simple system architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces byproduct deposition on exhaust forelines, enhances wafer processing uniformity by minimizing temperature and pressure non-uniformities, and maintains safe conduit temperatures, thereby extending equipment lifespan and improving processing efficiency.
Implementation Method 1
an exhaust foreline heating system configured to heat at least a first portion of the exhaust foreline
Implementation Method 2
a baffle plate with controlled cross-sectional openings for uniform gas flow
Implementation Method 3
a conduit cooling system configured to be transitionable between at least a first cooling state and a second cooling state
Data Source
AI summary
Disclosed herein are systems and apparatuses for facilitating semiconductor processing operations involving the use of chlorine-containing and ammonia-containing gases. The systems and apparatuses discussed herein may provide enhanced wafer uniformity and/or may reduce the potential for undesirable, and potentially hazardous, reaction byproduct build-up in such systems.