Forward Conducting Mode Material Screening for Semiconductor Interconnects
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Solution Overview
Problem
Conventional methods for determining the figure of merit (FOM) of materials for semiconductor interconnects are cumbersome and unsuitable for scaling, as they rely on bulk metal calculations that do not accurately represent the resistivity of materials at small dimensions, leading to increased resistance and performance issues in scaled-down nodes.
Innovation Solution
A method that calculates the FOM using only forward conducting modes for the unit cell, which is more efficient and applicable to both bulk materials and nanowires, allowing for the selection of suitable materials for interconnects by determining the resistivity multiplied by the mean free path, and integrating this calculation with machine learning to predict the FOM for other materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional bulk metal calculations are used to determine FOM, then the calculation method is well-established, but the results do not accurately represent resistivity at small dimensions leading to increased resistance in scaled-down nodes
Solution Approach 1:
The patent applies local quality by considering only forward conducting modes (specific k-vector directions) rather than averaging over all momentum states. This local approach to momentum space sampling captures the anisotropic nature of electron transport in nanoscale interconnects, providing accurate FOM predictions for scaled nodes while maintaining computational efficiency.
Solution Approach 2:
The patent changes the calculation parameters by using a simplified band structure model with selective k-point sampling (forward conducting modes only) instead of full bulk metal calculations. This parameter change enables accurate FOM determination for nanoscale dimensions where conventional bulk calculations fail, directly improving measurement precision for scaled node predictions.
2Productivity
If full band structure calculations with dense momentum grids are used, then comprehensive material properties can be obtained, but the computational complexity increases making the method cumbersome and unsuitable for machine learning integration
Solution Approach 1:
The patent extracts only the essential forward conducting modes from the complete band structure calculation, discarding redundant information about backward conducting and evanescent modes. This extraction reduces computational complexity by focusing only on the momentum states that contribute to forward electron transport, enabling high-throughput material screening while maintaining accuracy for FOM prediction.
Solution Approach 2:
The patent segments the momentum space integration by treating forward conducting modes separately from other modes. This segmentation allows independent calculation of only the relevant transport channels, significantly reducing computational complexity and enabling integration with machine learning workflows for rapid material evaluation.
3Ease of manufacture
If bulk FOM values are assumed to be extensible to thin films and nanowires, then material selection can be simplified, but the assumption fails to account for confinement effects causing conductance degradation at narrow pitches
Solution Approach 1:
The patent applies local quality by calculating FOM specifically for the confined nanowire geometry using forward conducting modes that respect the boundary conditions. This local calculation approach captures the quantum confinement effects and surface scattering that degrade conductance in narrow pitches, providing accurate FOM values for thin films and nanowires rather than relying on bulk assumptions.
Data Source
AI summary
A method for characterizing a material for use in a semiconductor device and the semiconductor device using the material are described. The material has a unit cell and a crystal structure. The method includes determining a figure of merit (FOM) for the material using only forward conducting modes for the unit cell. The FOM is a resistivity multiplied by a mean free path. The FOM may be used to determine a suitability of the material for use in the semiconductor device.