FOUP Gas Control Using CD Feedback to Limit Oxidation
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Solution Overview
Problem
Challenges exist in controlling the environment, particularly gas composition and humidity, within substrate carriers like FOUPs during semiconductor processing, leading to issues such as oxidation and contamination of substrates, which affect yield and production efficiency.
Innovation Solution
A gas control system that adjusts gas supply settings based on critical dimension (CD) data feedback, using a computing device to manage gas mixtures, flow rates, and durations within substrate carriers to maintain predetermined CD ranges, thereby reducing oxidation and contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrates are placed in substrate carriers (FOUPs) for waiting or transfer, then substrate handling and production efficiency are improved, but environment control (gas composition and humidity) becomes difficult, leading to oxidation and contamination
Solution Approach 1:
The patent applies inert atmosphere by introducing nitrogen gas into substrate carriers (FOUPs) to create an inert environment that prevents oxidation and contamination of substrates during waiting and transfer operations. The system controls nitrogen flow rates and gas composition to maintain protective atmosphere without compromising substrate handling efficiency.
Solution Approach 2:
The patent implements feedback control by monitoring critical dimension (CD) data of substrates and using this information to dynamically adjust gas supply settings in substrate carriers. The system measures CD parameters, compares them against target values, and modifies nitrogen flow rates or gas composition accordingly to prevent oxidation while maintaining production efficiency.
2Manufacturing precision
If environment control is implemented in substrate carriers, then substrate quality is improved, but device complexity and space requirements increase
Solution Approach 1:
The patent applies universality by designing substrate carriers that serve multiple functions: they act as both transport containers and environmentally-controlled chambers. The same FOUP structure that holds substrates also incorporates gas inlet/outlet ports and sensing capabilities, eliminating the need for separate environmental control devices and reducing overall system complexity.
Solution Approach 2:
The patent implements parameter changes by dynamically adjusting gas composition, flow rates, and pressure parameters within substrate carriers based on real-time substrate conditions and process requirements. This allows the system to maintain high substrate quality through precise environmental control while using a relatively simple carrier design that can adapt to different control needs.
3Object-affected harmful factors
If gas supply is increased to prevent oxidation, then substrate protection is improved, but gas consumption and cost increase
Solution Approach 1:
The patent applies dynamics by transitioning from static gas supply to dynamic gas flow control in substrate carriers. The system continuously adjusts nitrogen flow rates based on real-time substrate conditions, carrier position, and environmental parameters. This ensures adequate oxidation protection while minimizing gas consumption by supplying exactly the right amount of protective atmosphere needed at each moment.
Solution Approach 2:
The patent implements parameter changes by optimizing gas composition and flow rate parameters to achieve effective oxidation prevention with minimal gas consumption. The system varies nitrogen concentration, flow velocity, and pressure parameters according to specific process requirements, substrate sensitivity, and carrier conditions, thereby reducing overall gas usage while maintaining protective atmosphere effectiveness.
Data Source
AI summary
The present disclosure describes a method for controlling gas supplies and an example system for performing the method. The method includes providing a first setting to configure a gas supply device to supply a first gas mixture to a substrate carrier holding a first substrate. The method further includes receiving critical dimension (CD) data measured on the first substrate after the first substrate completes a process operation. The method further includes, in response to the CD data being outside a predetermined range, providing a second setting to configure the gas supply device to supply a second gas mixture to the substrate carrier holding a second substrate that has yet to undergo the process operation.