FOUP Nitrogen Purge for Moisture Control
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Solution Overview
Problem
The integration of semiconductor devices requires stringent protection from oxidation and moisture exposure, leading to complex manufacturing processes and increased time due to the need for 'Q-time' to prevent copper oxide formation and maintain ultra low-k dielectric integrity, which is challenging in traditional semiconductor wafer carriers and facility interfaces.
Innovation Solution
An apparatus with a sealed enclosure, a door, at least one valve, an inlet diffuser, and substrate holders is designed to maintain a controlled environment by providing a gas, such as hot nitrogen, to remove moisture and prevent contamination, using materials like PTFE or PFA to minimize moisture absorption and maintain a desired pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If substrates are frequently transferred between process chambers and FOUP, then manufacturing flexibility is improved, but oxidation risk increases due to repeated exposure to ambient air
Solution Approach 1:
The patent applies preliminary action by pre-purging the FOUP enclosure with nitrogen gas before substrate insertion and maintaining positive nitrogen pressure throughout storage. This advance preparation ensures that whenever the FOUP door is opened for substrate transfer, the internal atmosphere is already protected, eliminating oxidation risk during frequent manufacturing operations.
2Productivity
If the FOUP door is opened to allow substrate transfer, then manufacturing process continuity is improved, but oxygen and moisture from the environment enter the enclosure causing oxidation
Solution Approach 1:
The patent uses nitrogen gas as an intermediary substance that fills the FOUP enclosure atmosphere. When the door is opened for substrate transfer, the nitrogen atmosphere acts as a protective mediator, allowing air exchange while preventing oxidation. The nitrogen purge system continuously replenishes the atmosphere to maintain protection during door operations.
3Manufacturing precision
If cleaning processes are added to remove copper oxide layers, then electrical connection quality is improved, but process time and complexity increase
Solution Approach 1:
The patent applies preliminary anti-action by preventing copper oxide formation in the first place through nitrogen purging of the FOUP enclosure. By maintaining an oxygen-free atmosphere during substrate storage and transfer, the need for subsequent cleaning processes to remove oxidation is eliminated, simplifying the manufacturing process while maintaining electrical connection quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces the risk of oxidation and moisture exposure, simplifies the manufacturing process by extending the 'Q-time' and maintaining a stable moisture level within the carrier, thereby enhancing the integrity of semiconductor components.
Implementation Method 1
an inlet diffuser coupled to the valve and configured to provide a gas with a temperature substantially higher than a temperature of an environment around the enclosure
Implementation Method 2
If the copper layer 110 is exposed to air, the top surface of the copper layer 110 reacts with oxygen in air, forming a copper oxide layer 140 due to oxidation
Data Source
AI summary
An apparatus includes a first enclosure, a first door, at least one first valve, at least one inlet diffuser and at least one substrate holder. The first enclosure has a first opening. The first door is configured to seal the first opening. The first valve is coupled to the first enclosure. The inlet diffuser is coupled to the first valve and configured to provide a first gas with a temperature substantially higher than a temperature of an environment around the first enclosure. Each substrate holder disposed within the first enclosure supports at least one substrate.