Flat Panel Detector Insulating Layer Thickness Control
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Solution Overview
Problem
Flat panel detectors often experience uneven dark current distributions, affecting detection accuracy due to non-uniform thickness and resistance variations in the insulating layer between sensing and bias electrodes.
Innovation Solution
A flat panel detector design with a base substrate, sensing and bias electrodes, and an insulating layer where the thickness difference between regions corresponding to the sensing and bias electrodes is controlled to not exceed a preset threshold, ensuring uniform thickness and resistance, and a thin film transistor for signal reading and storage, with a semiconductor layer sensitive to illumination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the insulating layer thickness is increased to reduce resistance variations, then the detection accuracy is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent applies local quality by creating different thickness regions in the insulating layer corresponding to different electrode types. The insulating layer has a first thickness in the sensing electrode region and a second thickness in the bias electrode region, with the thickness ratio between 0.8-1.2. This localized thickness variation optimizes electrical properties in different regions while maintaining overall uniformity, resolving the contradiction between detection accuracy and manufacturing complexity.
Solution Approach 2:
The patent changes the thickness parameter of the insulating layer to resolve the contradiction. By controlling the thickness ratio between sensing and bias electrode regions within 0.8-1.2, the patent optimizes both detection accuracy (through controlled resistance variations) and manufacturing feasibility (by maintaining reasonable thickness values rather than uniformly increasing thickness throughout).
2Stability of the object's composition
If the insulating layer thickness is made uniform across all electrodes, then the resistance distribution is improved, but the dark current uniformity deteriorates due to electrode thickness variations
Solution Approach 1:
The patent applies local quality by creating different thickness regions in the insulating layer corresponding to different electrode types. The insulating layer has a first thickness in the sensing electrode region and a second thickness in the bias electrode region, with the thickness ratio between 0.8-1.2. This localized thickness variation optimizes electrical properties in different regions while maintaining overall uniformity, resolving the contradiction between detection accuracy and manufacturing complexity.
Solution Approach 2:
The patent applies asymmetry by intentionally creating an asymmetric insulating layer thickness distribution that corresponds to the asymmetric structure of sensing and bias electrodes. The insulating layer thickness is optimized differently for each electrode type, with the thickness ratio controlled between 0.8-1.2, rather than using a completely symmetric uniform thickness design.
3Power
If the sensing electrode thickness is increased to improve signal generation, then the photovoltaic effect is enhanced, but the overall device thickness and manufacturing complexity increase
Solution Approach 1:
The patent applies local quality by creating different thickness regions in the insulating layer corresponding to different electrode types. The insulating layer has a first thickness in the sensing electrode region and a second thickness in the bias electrode region, with the thickness ratio between 0.8-1.2. This localized thickness variation optimizes electrical properties in different regions while maintaining overall uniformity, resolving the contradiction between detection accuracy and manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves uniform dark current distribution and improved detection precision by maintaining the thickness difference within a predetermined threshold, enhancing the accuracy and reliability of the detection process.
Implementation Method 1
the semiconductor of the detector receives light, generates electric charge internally, and the resistance is greatly reduced, thereby converting the optical signal into an electrical signal through the photovoltaic effect
Implementation Method 2
When the voltage is high enough, the PI film can be turned on by the F-N tunneling effect of the electron, and the electrical signal generated in the semiconductor material can be read and stored by turning on and off the thin film transistor (TFT)
Data Source
AI summary
A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.