F-RAM Stack Processor Unified Memory Architecture

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Solution Overview

Problem

Current non-volatile memory technologies, such as Flash memory, have low endurance and high power consumption, making them unsuitable for applications requiring high endurance and low power usage, especially in environments where power supply voltage can be lost.

Innovation Solution

A stack processor architecture utilizing ferroelectric random access memory (F-RAM) for both code and data space, which allows for rapid data backup and low power consumption, with the option to store some stacks in volatile CMOS memory to balance power-down time and execution speed.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If Flash memory is used for non-volatile storage in stack processor, then data can be retained without power, but the endurance rate is multiple orders of magnitude below F-RAM and write operations are slow

Engineering Contradiction:
Improveendurance rateVSAvoidwrite speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent merges F-RAM and Flash memory into a unified memory space, allowing the system to leverage F-RAM's fast write speed and high endurance for frequent operations while using Flash's non-volatile特性 for data retention. The memory controller automatically manages data placement between the two memory types based on access patterns and data importance.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The memory system is segmented into different functional regions: F-RAM is used for the stack pointer, return stack, and frequently accessed data requiring high-speed writes and high endurance, while Flash memory stores less frequently accessed data. This segmentation allows each memory type to operate in its optimal performance regime.

Inventive Principle:
Principle #1Segmentation

2Reliability

If F-RAM is used for high endurance applications, then write speed and endurance are improved, but power consumption increases compared to volatile memory

Engineering Contradiction:
Improveendurance rateVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

Different memory regions are assigned different volatility characteristics based on their functional requirements. The stack pointer and return stack use F-RAM for high endurance, while other data structures can use volatile CMOS memory for lower power consumption during active operation. This local differentiation optimizes the overall power-endurance tradeoff.

Inventive Principle:
Principle #3Local quality

3Ease of operation

If separate memory types are used for code and data space, then functionality is maintained, but power consumption peaks occur due to simultaneous access to all memories

Engineering Contradiction:
Improvesimultaneous access capabilityVSAvoidpower consumption peak
Core Design Contradiction:
Ease of operationVSUse of energy by moving object

Solution Approach 1:

Code and data are stored in the same unified F-RAM memory space, eliminating the need for separate code and data memory banks. The memory controller handles all access requests to this single memory space, preventing simultaneous access conflicts and eliminating power consumption peaks associated with parallel memory operations.

Inventive Principle:
Principle #5Merging (Combining)

4Speed

If stack processor uses volatile memory for registers, then access speed is fast, but power-down time becomes very long and power demanding as large number of registers must be saved to non-volatile memory

Engineering Contradiction:
Improveaccess speedVSAvoidpower-down time
Core Design Contradiction:
SpeedVSLoss of time

Solution Approach 1:

The memory cells transition from volatile to non-volatile state through a phase change mechanism. During normal operation, the memory operates in volatile mode for fast access. During power-down, the same memory cells automatically retain data without requiring save operations, eliminating the time-consuming process of transferring register contents to external non-volatile storage.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The F-RAM based stack processor achieves quick power-down times, reduced power consumption, and efficient data storage, while minimizing on-chip die area and intellectual property costs, supporting a wide range of applications including metering and RFID.

Implementation Method 1

a ferroelectric random access memory (F-RAM) for both code and data space

Methodology Applied
Scientific EffectFerroelectric effect:

Data Source

PatentUS8949514B2Stack processor using a ferroelectric random access memory (F-RAM) for both code and data space
Publication Date: 2015.02.03 CYPRESS SEMICONDUCTOR CORP
  • US8949514B2 patent drawing
  • US8949514B2 patent drawing
  • US8949514B2 patent drawing

AI summary

A stack processor using a ferroelectric random access memory (F-RAM) for both code and data space which presents the advantages of easy stack pointer management inasmuch as the stack pointer is itself a memory address. Further, the time for saving all critical registers to memory is also minimized in that all registers are already maintained in non-volatile F-RAM per se.