Organic EL Frame Wire Protection via Planarization Slit Design
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Solution Overview
Problem
In organic EL display devices, the formation of a dam wall using the same material as the planarization film causes damage to the frame wire due to etching processes, leading to reduced sealing capability and potential deterioration of the organic EL elements.
Innovation Solution
A display device design featuring a first and second frame wire with edge portions facing each other, covered by a protective inorganic insulating film, and a sealing film structure with a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film, where the first planarization film and second planarization film include a slit to prevent damage from etching developers and etchants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the dam wall is formed of the same material as the planarization film, then the manufacturing process is simplified, but the frame wire is damaged by etching processes
Solution Approach 1:
The planarization film is segmented by introducing a slit that divides it into separate regions. This segmentation allows the frame wire to be positioned within the slit, protecting it from etching processes while maintaining the overall planarization function of the film.
Solution Approach 2:
The slit acts as an intermediary protective structure between the etching process and the frame wire. By positioning the frame wire within the slit, the slit mediates the interaction between the etchant and the frame wire, preventing direct contact and thus preventing damage.
2Productivity
If the frame wire is exposed to etching processes, then the planarization film can be formed continuously, but the sealing capability is reduced
Solution Approach 1:
The frame wire is preliminarily positioned within the slit of the planarization film before the etching process. This preliminary positioning ensures that the frame wire is protected from etching damage, allowing the etching process to proceed continuously without compromising the frame wire's integrity or the sealing capability.
3Manufacturing precision
If the frame wire end portion is shaped into a peak, then the planarization process is completed, but the sealing capability of the sealing film is reduced
Solution Approach 1:
The slit in the planarization film provides a protective cushioning structure for the frame wire before the etching process occurs. This beforehand protection prevents the frame wire from being damaged and shaped into a peak, thereby maintaining the sealing capability of the sealing film while still allowing the planarization process to be completed.
Data Source
AI summary
A thin-film transistor layer includes: a first wiring layer; a first planarization film; a second wiring layer; and a second planarization film, all of which are stacked on top of another in a stated order. The first planarization film and the second planarization film include a first slit shaped into a frame, provided between the display region and the first dam wall, and penetrating the first planarization film and the second planarization film. In the first slit, a first frame wire and a second frame wire have respective edge portions facing each other and covered with a protective film made of an inorganic insulating film included in the thin-film transistor layer.