Freestanding Vanadium Oxide Membrane Infrared Sensor Fabrication

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Solution Overview

Problem

Current methods for fabricating bolometer-type infrared sensors are limited in their ability to create freestanding vanadium oxide membranes for effective temperature sensing, which is crucial for accurate infrared radiation measurement.

Innovation Solution

A method involving the deposition of a chalcogenide layer on a substrate, formation of vias, conversion to studs, and deposition of a vanadium oxide layer, followed by etching to create freestanding vanadium oxide membranes supported by studs, allowing for precise temperature sensing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional fabrication methods are used, then manufacturing process is simpler, but freestanding vanadium oxide membranes cannot be effectively created for temperature sensing

Engineering Contradiction:
Improvemembrane fabrication precisionVSAvoidfabrication process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The fabrication process is segmented into distinct stages: depositing chalcogenide layer, forming vias, converting to studs, depositing vanadium oxide layer, and etching to create freestanding membranes. Each stage produces a specific structural element that contributes to the final freestanding membrane configuration, enabling precise temperature sensing while managing process complexity through systematic breakdown of steps.

Inventive Principle:
Principle #1Segmentation

2Measurement precision

If vanadium oxide membranes are not properly isolated and supported, then fabrication process is simpler, but temperature sensing accuracy deteriorates

Engineering Contradiction:
Improvetemperature sensing accuracyVSAvoidfabrication ease
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The chalcogenide layer serves as an intermediary material that is deposited first, then selectively removed after the vanadium oxide layer is formed. This intermediary approach allows the vanadium oxide membranes to be properly isolated and supported by studs without direct complex fabrication steps, achieving both measurement precision and ease of manufacture by using the chalcogenide as a temporary supporting structure during fabrication.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the fabrication of high-performance optical sensors capable of accurate infrared radiation measurement, suitable for thermal imaging devices, by ensuring the vanadium oxide membranes are isolated and supported effectively.

Implementation Method 1

The infrared radiation is absorbed within the membrane whose temperature increases as a result

Methodology Applied
Scientific EffectElectromagnetic radiation absorption: Absorption (EM radiation)

Implementation Method 2

If the membrane includes a metallic or a semiconducting material, the electrical resistance will change depending on the increase in temperature and on the temperature coefficient of resistance of the material being used

Methodology Applied
Scientific EffectTemperature coefficient of resistance: Electrical Resistance

Data Source

PatentUS8822256B1Method for fabricating infrared sensors
Publication Date: 2014.09.02 BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC
  • US8822256B1 patent drawing
  • US8822256B1 patent drawing
  • US8822256B1 patent drawing

AI summary

A method for fabricating infrared sensors is disclosed. a chalcogenide layer is initially deposited on a substrate. A group of vias is then formed within the chalcogenide layer. After the vias have been converted to a group of studs, a vanadium oxide layer is deposited on the chalcogenide layer covering the studs. Next, the vanadium oxide layer is separated into multiple vanadium oxide membranes. After the chalcogenide layer has been removed, each of the vanadium oxide membranes is allowed to be freestanding while only supported by a corresponding one of the studs. The vanadium oxide membranes will be used as infrared sensors.