Frequency Adjusting Apparatus with Pattern Mask and Shutter Control
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Solution Overview
Problem
Conventional frequency adjusting methods for piezoelectric elements face challenges in accurately adjusting the frequencies of small elements closely arranged on a wafer due to difficulties in selective ion beam application, leading to incomplete irradiation and reduced accuracy.
Innovation Solution
A frequency adjusting apparatus with a pattern mask having alternately displaced mask holes in the wafer conveying direction and shutters to control irradiation time, ensuring uniform ion beam application and maintaining a constant masking position, allowing for precise frequency adjustment of closely arranged elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a pattern mask is used to selectively apply ion beam to small elements, then selective irradiation is improved, but manufacturing precision deteriorates because it is difficult to apply ion beam only to desired elements
Solution Approach 1:
The pattern mask is divided into multiple independently controllable shutter mechanisms, each corresponding to a specific mask hole. This segmentation allows independent control of ion beam application to each element, achieving both selective irradiation and precise positioning. Each shutter can be opened or closed separately to control the ion beam path to specific small elements on the wafer.
Solution Approach 2:
The shutter mechanisms are made dynamically controllable, allowing real-time adjustment of which mask holes are open or closed during the ion beam irradiation process. This dynamic control enables precise timing and positioning of ion beam application to each element, solving the problem of inaccurate irradiation while maintaining selective coverage.
2Productivity
If elements are closely arranged on the wafer to increase productivity, then productivity is improved, but manufacturing precision deteriorates due to ion beam spreading and incomplete irradiation
Solution Approach 1:
Each element or group of elements is assigned its own dedicated mask hole and shutter mechanism. This one-to-one or one-to-many correspondence ensures that ion beam is applied uniformly to each element's specific area without spreading to adjacent elements, even when elements are closely arranged. The segmentation maintains precise boundaries between irradiation zones.
Solution Approach 2:
The system incorporates frequency measurement and control feedback to monitor the etching process in real-time. By measuring the frequency of each element and comparing it to target values, the system can adjust the ion beam irradiation parameters dynamically, ensuring uniform etching across all closely arranged elements and compensating for any variations in the process.
3Reliability
If mask holes are made larger to ensure sufficient ion beam irradiation, then irradiation completeness is improved, but reliability deteriorates because adjacent areas may be irradiated
Solution Approach 1:
The mask is segmented into multiple discrete mask holes, each sized appropriately for its target element. This segmentation allows each hole to be optimized independently - large enough to ensure complete irradiation of the target element, but small and positioned specifically to prevent irradiation of adjacent areas. The physical separation of mask holes creates natural boundaries that prevent cross-contamination.
Solution Approach 2:
Each mask hole and its corresponding shutter mechanism are optimized locally for its specific target element. The size, shape, and position of each mask hole are tailored to the dimensions and location of its target element, ensuring complete coverage of the target while maintaining appropriate clearance from neighboring elements. This local optimization resolves the contradiction between complete irradiation and preventing adjacent area contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables accurate and efficient frequency adjustment of small elements on a wafer by minimizing ion beam spreading and ensuring uniform etching, even at the edges and adjacent areas, thereby improving processing efficiency and accuracy.
Implementation Method 1
the frequency of a piezoelectric element is adjusted by etching the piezoelectric element with an ion beam
Implementation Method 2
etching the electrodes
Data Source
AI summary
A wafer having a plurality of elements closely arranged thereon is irradiated with an ion beam while being conveyed in one direction by a conveying unit. Each of shutters adjusts an irradiation time during which a target area of the wafer is irradiated with the ion beam. Thus, a frequency in the target area is adjusted. Each of a plurality of mask holes in a pattern mask disposed between the wafer and the shutters corresponds to one area of the wafer. The mask holes are alternately displaced in a wafer conveying direction in which the wafer is conveyed, and are arranged in a plurality of columns perpendicular to the wafer conveying direction. To individually open and close the mask holes, the shutters are arranged to correspond to the respective mask holes. Thus, frequency adjustment, for areas in one column perpendicular to the wafer conveying direction, is performed in multiple steps.