Frequency-Variable Power Supply for Plasma Distribution Control
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in uniformly controlling plasma distribution within a processing chamber due to limitations in independently adjusting high frequency power applied to inner and outer electrodes, leading to non-uniform plasma generation and increased complexity in apparatus configuration.
Innovation Solution
A plasma processing apparatus equipped with a frequency-variable power supply that generates high frequency current through multiple routes, each with distinct reflection minimum frequencies, allowing for independent control of plasma distribution by adjusting the frequency to optimize plasma generation in specific areas without complicating the apparatus configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high frequency power is applied to inner and outer electrodes to control plasma distribution, then plasma distribution control is improved, but apparatus configuration complexity increases
Solution Approach 1:
The upper electrode is divided into an inner electrode and an outer electrode, creating separate regions that can be independently controlled. This segmentation allows different high frequency powers to be applied to different regions, enabling precise control of plasma distribution without requiring complex additional components
Solution Approach 2:
The system dynamically adjusts the high frequency power values applied to the inner and outer electrodes based on processing requirements. By making the power values variable rather than fixed, the system can adapt plasma distribution to different processing conditions while maintaining a relatively simple apparatus structure
2Adaptability or versatility
If multiple high frequency power supplies are used to independently control inner and outer electrodes, then plasma distribution control is improved, but device complexity increases
Solution Approach 1:
A single high frequency power supply is designed to perform multiple functions by outputting different power values to different electrodes. The power supply can selectively apply different power levels to the inner and outer electrodes through controlled output, eliminating the need for separate power supplies while maintaining full control flexibility
Solution Approach 2:
The system controls plasma distribution by changing the parameter values (power levels) output to different electrodes from a single power supply, rather than using multiple power supplies. This parameter-based control approach achieves the same versatility as multiple power supplies while significantly reducing apparatus complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the degree of freedom in controlling plasma distribution, enabling uniform plasma processing by adjusting the amount of high frequency current flowing through different routes, thereby improving the reliability and efficiency of plasma generation within the processing chamber.
Implementation Method 1
a frequency-variable power supply connected to the electrode and configured to change a frequency of a high frequency power to be supplied to the electrode
Implementation Method 2
an electrode configured to generate the plasma within the processing chamber
Implementation Method 3
A plurality of routes of the high frequency current, which starts from the frequency-variable power supply and passes through the plasma, is present, and the plurality of routes of the high frequency current includes at least a first route and a second route, a reflection minimum frequency of the first route is different from a reflection minimum frequency of the second route
Data Source
AI summary
Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.