Fringeless Transistor Gate Structures for Multi-Voltage Circuit Density
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Solution Overview
Problem
The challenge in semiconductor technology is to design field effect transistors that operate at different operating voltages while maintaining high device density, which is difficult to achieve with existing peripheral circuitry.
Innovation Solution
The semiconductor structure comprises multiple field effect transistors with specific gate electrode configurations and trench isolation structures, including a first field effect transistor with a semiconductor gate electrode portion and a second field effect transistor with a stack of semiconductor gate electrode portions, along with dielectric material layers, to enable efficient operation at various voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If field effect transistors are configured to operate at different operating voltages, then operational versatility is improved, but device density deteriorates
Solution Approach 1:
The patent applies local quality by configuring different gate electrode structures in different regions of the semiconductor device. Specifically, fringeless transistors use gate electrodes with different geometries (e.g., merged gate structures) compared to conventional transistors, allowing each region to be optimized for its specific voltage requirement while maintaining high overall device density through localized structural variations rather than uniform design
2Quantity of substance
If fringeless transistor configurations are used, then device density is improved, but manufacturing complexity worsens
Solution Approach 1:
The patent merges adjacent gate electrode portions to form continuous gate structures for fringeless transistors. By combining multiple gate segments into unified structures, the design achieves higher device density while the merging process itself can be integrated into existing semiconductor manufacturing flows, balancing the increased structural complexity with process compatibility
3Adaptability or versatility
If multiple gate electrode portions are stacked, then operational voltage control is improved, but manufacturing precision requirements worsen
Solution Approach 1:
The patent employs preliminary patterning actions where gate electrode portions are formed in sequential steps with predetermined geometries. By pre-defining the shapes and positions of individual gate portions before final assembly, the manufacturing process achieves the required precision for stacked configurations while maintaining flexibility in voltage control through the staged formation approach
Data Source
AI summary
A lateral extent of a gate electrode of a field effect transistor along a gate electrode direction that is perpendicular to a channel direction can be the same as a width of an underlying active region. A gate electrode of an additional field effect transistor may extend over a trench isolation structure that laterally surrounds the additional field effect transistor. Different types of electrodes may be formed by patterning a lower gate material layer and by patterning an upper gate material layer with different patterns such that patterned portions of the lower gate material layer are confined within areas of active regions, while patterned portions of the upper gate material layer extends outside of the areas of the active regions.