Fringeless Transistor Gate Structure for Multi-Voltage Density
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Solution Overview
Problem
Developing field effect transistors that operate at different operating voltages while maintaining high device density is a challenge in semiconductor technology.
Innovation Solution
The semiconductor structure includes a field effect transistor with a gate electrode comprising both semiconductor and metallic portions, where the metallic gate electrode extends further laterally than the semiconductor gate electrode, and trench isolation structures are used to form active regions and gate electrodes, allowing for efficient voltage operation and high density integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If field effect transistors are configured to operate at different operating voltages, then voltage compatibility is improved, but device density deteriorates
Solution Approach 1:
The patent applies local quality by creating different gate electrode configurations in different regions of the semiconductor device. Specifically, some gate electrodes include metallic portions while others are purely semiconductor-based, allowing adjacent transistors to operate at different voltages while maintaining high device density through localized structural variations rather than global redesign
Solution Approach 2:
The patent employs composite materials by combining semiconductor and metallic materials in the gate electrode structure. The metallic gate electrode portion is formed over the semiconductor gate electrode, creating a composite structure that enables different operating voltages for different transistors while maintaining compact integration and high device density
2Adaptability or versatility
If metallic gate electrode portions are added to enable different operating voltages, then voltage compatibility is improved, but manufacturing complexity worsens
Solution Approach 1:
The patent applies segmentation by dividing the gate electrode into distinct portions: a semiconductor gate electrode portion and a metallic gate electrode portion. This segmentation allows selective formation of metallic gates only where needed for specific voltage requirements, rather than applying complex structures uniformly across all devices, thereby managing manufacturing complexity
Solution Approach 2:
The patent employs preliminary action by forming the semiconductor gate electrode portion first, then subsequently forming the metallic gate electrode portion over specific regions. This sequential approach allows the metallic gate formation to be targeted only where needed, simplifying the overall manufacturing process compared to forming complex structures simultaneously across all device regions
Data Source
AI summary
A first field effect transistor includes a first active region and a first gate electrode that includes a first semiconductor gate electrode portion and a first metallic gate electrode portion. The first active region includes a first source region and a first drain region that are laterally spaced from each other by a first channel along a first channel direction. The first gate electrode laterally extends along a first gate electrode direction that is perpendicular to the first channel direction. A maximum lateral extent of the first metallic gate electrode portion along the first gate electrode direction is greater than a maximum lateral extent of the first semiconductor gate electrode portion along the first gate electrode direction.