Transistor With Front-Side and Back-Side Contacts for Flexible Routing
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Solution Overview
Problem
Conventional transistors often have limited flexibility in routing arrangements and control due to the placement of source, drain, and gate contacts being restricted to either the front-side or back-side of the device, limiting the ability to access and control transistors from both sides effectively.
Innovation Solution
The integration of front-side and back-side contacts in transistors, allowing for dual access and enhanced routing capabilities by incorporating contacts on both sides of the transistor, with the channel material enclosed by source and drain regions and a gate electrode, enabling greater flexibility in controlling the transistor from multiple angles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If contacts are placed only on the front-side or back-side of the transistor, then the manufacturing process is simplified, but the routing flexibility and control capability are limited
Solution Approach 1:
The patent transitions from traditional planar contact arrangements (front-side or back-side only) to a three-dimensional contact configuration by adding contacts on both the front-side and back-side of the transistor. This dimensional expansion enables routing signals from multiple directions simultaneously, improving adaptability in complex IC interconnect designs without requiring a complete redesign of the manufacturing process
2Ease of operation
If dual front-side and back-side contacts are integrated, then control capability and routing options are enhanced, but the manufacturing process becomes more complex
Solution Approach 1:
The patent segments the contact formation process into distinct front-side and back-side operations, allowing each side to be processed independently using established fabrication techniques. This segmentation enables the integration of dual contacts while maintaining manufacturing feasibility, as each side can be optimized and controlled separately during the fabrication process
3Adaptability or versatility
If all contacts are placed on one side of the transistor, then the device structure is simpler, but the ability to access and control transistors from multiple sides is reduced
Solution Approach 1:
The patent implements a universal contact configuration where both front-side and back-side contacts serve multiple functions: they provide electrical connectivity, enable signal routing from different directions, and facilitate transistor control from either side. This multi-functional approach increases adaptability for various IC design scenarios while using a standardized contact structure that can be applied across different transistor types
Data Source
AI summary
Described herein are transistors with front-side and back-side routing, and IC devices including such transistors. The transistor includes a channel material having a longitudinal structure and formed in a dielectric material. A source region encloses a first portion of the channel material, a gate electrode encloses a second portion of the channel material, and a drain region encloses a third portion of the channel material. Each of the source region, gate electrode, and drain region have a first face and a second face opposite the first face, the first and second faces co-planar with the faces of the dielectric material. A first contact is coupled to the first face of the source region, and a second contact is coupled to the second face of the source region.