FT-IR Carbon Concentration Measurement Correction
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Solution Overview
Problem
The measurement of extremely low carbon concentrations in silicon single crystals using FT-IR is prone to daily variations and poor reproducibility, primarily due to temperature dependency, leading to fluctuating results for the same sample.
Innovation Solution
A method and device that measure and correct carbon concentration in silicon single crystals using FT-IR by calculating a correction coefficient based on temperature differences between the measurement and reference temperatures, allowing for accurate carbon concentration determination at a reference temperature, thereby stabilizing the measurement results.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If FT-IR is used to measure extremely low carbon concentration in silicon single crystal, then measurement capability for low carbon concentration is achieved, but measurement precision deteriorates due to temperature dependency causing daily variations
Solution Approach 1:
The patent applies parameter changes by introducing temperature as a correction parameter. The system measures the actual temperature of the sample during FT-IR measurement and uses this temperature parameter to correct the carbon concentration measurement results. This resolves the contradiction by maintaining measurement precision across varying temperatures while improving reliability through temperature-based compensation
Solution Approach 2:
The patent implements feedback by measuring the sample temperature during FT-IR analysis and using this temperature information to adjust and correct the carbon concentration results. The temperature measurement feedback loop enables real-time compensation for temperature-induced variations, thereby improving measurement reproducibility without sacrificing precision
2Reliability
If temperature correction is applied to improve measurement reproducibility, then measurement stability is improved, but device complexity increases due to additional temperature measurement and correction mechanisms
Solution Approach 1:
The patent uses temperature as an intermediary parameter that mediates between the physical measurement conditions and the final carbon concentration results. By introducing temperature measurement and using it as a correction factor, the system improves reproducibility while adding minimal complexity compared to complete system redesign
Solution Approach 2:
The patent changes the measurement approach by adding temperature as an additional measured parameter that informs the correction of carbon concentration results. This parameter-based correction approach improves reliability with relatively simple additions rather than complex system overhauls
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables accurate measurement of carbon concentration in silicon single crystals even at extremely low levels, reducing temperature-induced fluctuations and enhancing measurement reproducibility.
Implementation Method 1
measuring an infrared absorption spectrum of a measured sample of silicon single crystal
Implementation Method 2
a peak of localized vibrational absorption of the substitutional carbon in the difference absorption spectrum
Data Source
AI summary
A method for measuring carbon concentration in silicon single crystal according to the present invention includes a step of measuring a carbon concentration of a sample of silicon single crystal using FT-IR, a step of measuring a temperature of the sample during, prior to, or after the measurement of the carbon concentration of the sample, and steps of correcting a measured value Ycs of the carbon concentration of the sample based on the measuring temperature of the sample when the measured Ycs value of the carbon concentration of the sample is at or below 0.5×1016 atoms/cm3.