Full-Bridge Semiconductor Module Layout for Low-Noise Temperature Sensing
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Solution Overview
Problem
Conventional semiconductor modules face challenges in accurately detecting temperature, particularly those using wideband gap semiconductor elements that generate significant heat, necessitating improved temperature detection methods.
Innovation Solution
A semiconductor module design with a full bridge circuit configuration, including temperature detection elements and specific wiring patterns, reduces parasitic capacitance noise by positioning the temperature detection element within switching paths and balancing parasitic capacitances between wiring patterns, ensuring accurate and stable temperature detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature detection element is added to detect temperature in the semiconductor module, then temperature detection capability is improved, but noise from parasitic capacitance increases and measurement precision deteriorates
Solution Approach 1:
A shielding wiring pattern is introduced as an intermediary element between the temperature detection wiring pattern and the switching current paths. This shielding pattern acts as a mediator that blocks electromagnetic interference and parasitic capacitance coupling from the high-current switching paths to the sensitive temperature detection circuit, thereby reducing noise while preserving temperature detection accuracy
Solution Approach 2:
The temperature detection element is extracted and positioned in a dedicated region surrounded by switching paths, separating it from the main power circuits. This spatial extraction isolates the temperature detection function from the noisy switching operations, reducing parasitic capacitance interference while maintaining detection capability
2Power
If wideband gap semiconductor elements are used to increase power handling capability, then power handling is improved, but heat generation increases and temperature control becomes more difficult
Solution Approach 1:
Temperature detection wiring patterns and elements are pre-positioned in optimal locations surrounding the switching paths before operation. This preliminary arrangement ensures that temperature monitoring is established before thermal issues arise, enabling proactive temperature management in high-power wideband gap semiconductor modules
Solution Approach 2:
The temperature detection element provides real-time feedback on the thermal state of the semiconductor module. This feedback mechanism enables continuous monitoring and control of operating temperature, allowing the system to maintain safe operating conditions even when handling high electric power with wideband gap semiconductor elements
Data Source
AI summary
A semiconductor module includes first to fourth semiconductor elements, a plurality of wiring patterns, a first power source terminal, second power source terminals, a first intermediate point terminal and a second intermediate point terminal, and a full bridge circuit is formed in the semiconductor module. The semiconductor module further includes a temperature detection element; first and second temperature detection wiring patterns; and first and second temperature detection terminals. The temperature detection element is disposed in a region surrounded by a first switching path and a second switching path. The semiconductor module is configured to reduce noises caused by a parasitic capacitance between a second wiring pattern and a first temperature detection wiring pattern, and a parasitic capacitance between a fourth wiring pattern and a first temperature detection wiring pattern.