Full-Bridge Semiconductor Module With Accurate Temperature Sensing
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Solution Overview
Problem
Existing semiconductor modules, particularly those using wide bandgap semiconductor elements, face challenges in accurately detecting temperature due to high heat generation, necessitating improved temperature detection methods.
Innovation Solution
A semiconductor module design incorporating a temperature detection element within a full bridge circuit, with capacitors and capacitive coupling reducing wiring patterns to stabilize noise and enhance temperature detection accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature detection element is added to the semiconductor module, then temperature detection capability is improved, but device complexity increases
Solution Approach 1:
The temperature detection element is integrated within the existing full bridge circuit structure, merging the detection function with the power circuit rather than adding a separate detection module. This reduces overall device complexity while enabling accurate temperature monitoring at the heat source location.
Solution Approach 2:
Capacitors are introduced as intermediary elements to couple the temperature detection element with the signal processing circuitry. These capacitors act as mediators that block high-frequency noise from the switching circuits while allowing the temperature signal to pass through, thereby improving measurement precision without requiring complex filtering structures.
2Measurement precision
If the temperature detection element is placed near the heat generation source, then temperature detection accuracy is improved, but noise interference increases
Solution Approach 1:
Capacitors are strategically placed between the temperature detection element and the external circuitry to serve as noise filters. These capacitors block high-frequency switching noise while allowing the lower-frequency temperature signal to pass through, effectively separating the detection element from harmful electromagnetic interference generated by nearby power switching operations.
Solution Approach 2:
The harmful high-frequency noise components are extracted and blocked by the capacitive coupling structure, separating them from the temperature detection signal path. This allows the temperature detection element to remain close to the heat source for accurate measurement while the noise is removed through the capacitive filter.
3Object-affected harmful factors
If capacitive coupling is used for the temperature detection element, then noise reduction is improved, but detection circuit complexity increases
Solution Approach 1:
The circuit uses passive capacitive coupling rather than active noise filtering components. By changing the coupling parameter from direct electrical connection to capacitive coupling, noise is naturally reduced through the frequency-dependent impedance of the capacitors, achieving noise reduction with minimal additional circuit complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables accurate and stable temperature detection by balancing capacitances and reducing noise, ensuring precise temperature control in high-heat generating semiconductor modules.
Implementation Method 1
a first capacitor that is disposed between a first temperature detection path that extends from the first temperature detection electrode to the first temperature detection terminal and a common portion between the first current path and the fourth current path; and a second capacitor that is disposed between the first temperature detection path and a common portion between the second current path and the third current path
Data Source
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AI summary
[Problem] To provide a semiconductor module capable of performing the temperature detection more accurately. [Means] A semiconductor module 1 includes first to fourth semiconductor elements Q1 to Q4, a plurality of wiring patterns, a first power source terminal 51, second power source terminals 52, 53, a first intermediate point terminal 61 and a second intermediate point terminal 62. The semiconductor module 1 has a full bridge circuit in which a first switching path P1 that includes a first current path P1 and a second current path P2 and a second switching path B that includes a third current path P3 and a fourth current path P4 are formed exclusively by a switching operation. The semiconductor module 1 further includes: a temperature detection element 9o that is disposed in a region surrounded by the first and the second switching paths A, B; a first capacitor 95 that is disposed between a first temperature detection path TP1 and a common portion between the first current path P1 and the fourth current path P4; and a second capacitor 96 that is disposed between the first temperature detection path TP1 and a common portion between the second current path P2 and the third current path P3.