Full-Height Gate-Cut Trench Contact for Faster FET Gate Response
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Solution Overview
Problem
Field Effect Transistors (FETs) face challenges in reducing Schottky resistance between the gate contact and the active gate structure, which affects gate response time due to limited contact area.
Innovation Solution
A gate contact is implemented within a gate-cut trench that extends the full height of the active gate structure, enhancing the interface area and reducing resistance through a conductive slab in the gate cut trenches and buried interconnects, allowing for a shared active gate structure across n-type and p-type FETs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional gate contact structure is used with limited contact area, then the device complexity is reduced, but the Schottky resistance increases and gate response time deteriorates
Solution Approach 1:
The gate contact is extended vertically to match the full height of the active gate structure, transitioning from a limited-area contact to a full-height contact. This dimensional extension increases the contact interface area between the gate contact and the active gate structure, thereby reducing Schottky resistance without significantly increasing lateral device complexity
Solution Approach 2:
The gate region is segmented into active gate structures for n-type and p-type FETs, with gate cut trenches separating them. The gate contact is strategically positioned within these trenches to provide electrical connection to the active gate structures while maintaining isolation between different device regions
2Adaptability or versatility
If gate cut trenches are introduced to separate n-type and p-type FETs, then device versatility is improved, but the manufacturing complexity increases
Solution Approach 1:
The gate cut trenches serve multiple functions: they physically separate n-type and p-type FETs, provide pathways for gate contact formation, and enable shared active gate structures. This multi-functionality allows a single fabrication approach to achieve both device separation and contact formation
Solution Approach 2:
The gate cut trenches are formed preliminarily in the gate structure before final gate contact deposition. This preliminary action creates predefined pathways that guide subsequent gate contact formation, simplifying the manufacturing process by establishing the separation and contact geometry in advance
Data Source
AI summary
A field effect device is provided. The field effect device includes an active gate structure, a gate contact within the active gate structure, wherein the gate contact is the same height as the active gate structure, and a gate cut dielectric on opposite sides of the gate contact and active gate structure.