Full-Reflection Display Substrate Etch Stop Pattern

The patent applies preliminary action by forming the etch stop pattern before the wet-etching process. The etch stop pattern is created in advance using a separate photolithography and etching process, which then serves as a protective mask during the subsequent reflection layer formation. This preliminary preparation prevents the bonding pin from being etched while still allowing the reflection layer to be formed effectively.

The etch stop pattern acts as an intermediary element between the etching solution and the bonding pin. It is formed from the same conductive film layer material as the reflection layer, creating a protective barrier that mediates the wet-etching process. The etch stop pattern allows the etching solution to access and etch the reflection layer areas while blocking the bonding pin from direct contact with the etching solution.

The patent applies preliminary anti-action by creating the etch stop pattern in advance to counteract the harmful etching effect before it can damage the bonding pin. The etch stop pattern is positioned to directly oppose the etching solution's path toward the bonding pin, creating a protective barrier that prevents the harmful etching action from occurring during the reflection layer formation process.

The etch stop pattern serves as an intermediary protective layer between the bonding pin and the etching environment. It allows the bonding pin to remain exposed for coupling operations while simultaneously protecting it from the harmful etching solution during reflection layer formation, thus mediating between the need for exposure and the need for protection.