Full-Swing Voltage Conversion Circuit for Subthreshold Level Shifting

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Solution Overview

Problem

Traditional level-shifters face challenges in converting signals from a low voltage domain to a high voltage domain, particularly from a subthreshold voltage domain, due to intense competition between pull-up and pull-down networks, resulting in large power leakage, a narrow input voltage range, and long conversion delays.

Innovation Solution

A full swing voltage conversion circuit is introduced, featuring an auxiliary pull-down unit with multiple NMOS transistors connected in series, which improves the conversion unit's ability to recognize differential input signals by forming additional pull-down paths, enabling effective conversion from a low voltage to a high voltage domain.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a traditional level-shifter uses cross-coupled PMOS transistors and pull-down NMOS transistors for voltage conversion from low voltage domain to high voltage domain, then the circuit structure is simple, but the power leakage is large, input voltage range is narrow, and conversion delay is long

Engineering Contradiction:
Improvecircuit structureVSAvoidpower leakage
Core Design Contradiction:
Device complexityVSLoss of energy

Solution Approach 1:

The level-shifter circuit is divided into multiple independent modules: differential input unit, conversion unit, auxiliary pull-down unit, and output driving unit. Each unit performs a specific function, allowing optimized design of pull-up and pull-down paths separately to reduce power leakage while maintaining simplicity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The auxiliary pull-down unit acts as an intermediary between the differential input unit and conversion unit, providing additional pull-down paths that improve signal recognition capability without significantly increasing overall circuit complexity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If a traditional level-shifter uses cross-coupled PMOS transistors and pull-down NMOS transistors for voltage conversion, then the circuit structure is simple, but the input voltage range is narrow

Engineering Contradiction:
Improvecircuit structureVSAvoidinput voltage range
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The circuit employs dynamic control of pull-down paths through the auxiliary pull-down unit, which is activated based on differential input signals. This dynamic adjustment allows the circuit to adapt to different input voltage conditions and expand the effective input voltage range.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the electrical parameters of the pull-down network by introducing additional NMOS transistors with different threshold voltages, allowing the circuit to handle a broader range of input voltages while maintaining a relatively simple overall structure.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If a traditional level-shifter uses cross-coupled PMOS transistors and pull-down NMOS transistors for voltage conversion, then the circuit structure is simple, but the conversion delay is long

Engineering Contradiction:
Improvecircuit structureVSAvoidconversion delay
Core Design Contradiction:
Device complexityVSLoss of time

Solution Approach 1:

The auxiliary pull-down unit prepares additional pull-down paths in advance, which are quickly activated when differential input signals are detected. This preliminary preparation reduces the time required for voltage conversion by having ready-to-use pathways for signal transition.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The circuit maintains continuous pull-down capability through the auxiliary unit, ensuring that the conversion process can proceed without interruption or waiting periods, thereby reducing overall conversion delay while keeping the circuit structure relatively simple.

Inventive Principle:
Principle #20Continuity of useful action

4Adaptability or versatility

If a subthreshold level-shifter uses multiple threshold voltage PMOS transistors and low threshold voltage NMOS transistors, then the input voltage range is expanded, but the device complexity and manufacturing difficulty increase significantly

Engineering Contradiction:
Improveinput voltage rangeVSAvoidcircuit structure
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

Instead of using multiple threshold voltage PMOS transistors throughout the circuit, the invention applies different threshold voltage characteristics locally - using standard PMOS transistors in the cross-coupled pair and auxiliary pull-down unit, while only employing low threshold voltage NMOS transistors where specifically needed for pull-down functionality. This localized approach expands input voltage range while controlling overall complexity.

Inventive Principle:
Principle #3Local quality

5Adaptability or versatility

If a subthreshold level-shifter uses multiple threshold voltage PMOS transistors and low threshold voltage NMOS transistors, then the input voltage range is expanded, but the production difficulty increases

Engineering Contradiction:
Improveinput voltage rangeVSAvoidproduction difficulty
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The invention strategically changes threshold voltage parameters only where necessary - using low threshold voltage NMOS transistors specifically in the auxiliary pull-down unit and input stage, while maintaining standard PMOS transistors in the cross-coupled pair. This selective parameter change expands input voltage range while minimizing production complexity compared to using multiple threshold voltage variants throughout the entire circuit.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The full swing voltage conversion circuit efficiently converts low voltage signals to high voltage signals, reducing power consumption and improving conversion speed by utilizing the auxiliary pull-down unit to enhance signal recognition and output voltage.

Implementation Method 1

an auxiliary pull-down unit between the input terminal and the conversion unit for receiving a feedback signal from the output driving unit. In the full swing voltage conversion circuit, capability of the conversion unit in recognizing the differential input unit is improved by turning on the auxiliary pull-down unit to form auxiliary pull-down paths of the conversion unit.

Methodology Applied
Scientific EffectTransistor operation:

Data Source

PatentUS11409314B2Full swing voltage conversion circuit and operation unit, chip, hash board, and computing device using same
Publication Date: 2022.08.09 CANAAN CREATIVE CO LTD
  • US11409314B2 patent drawing
  • US11409314B2 patent drawing
  • US11409314B2 patent drawing

AI summary

The invention provides a full swing voltage conversion circuit. The full swing voltage conversion circuit comprises: an input terminal for inputting a first level signal; an output terminal for outputting a second level signal; a differential input unit for inverting the first level signal of the input terminal, and outputting a differential input signal; a conversion unit; and an output driving unit; wherein the full swing voltage conversion circuit further comprises an auxiliary pull-down unit between the input terminal and the conversion unit for receiving a feedback to improve capability of the conversion unit in recognizing the differential input signal, such that the full swing voltage conversion circuit of the invention can convert from inputting a low voltage to outputting a high voltage.