Fullerene Clusters for Low Dielectric Constant Polymer Films
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Solution Overview
Problem
Current microelectronic devices face challenges in achieving low dielectric constant materials that are both effective and suitable for use as intra- or interlayer dielectrics, as existing materials often lack the necessary solubility, thermal stability, and mechanical strength required for high-performance applications.
Innovation Solution
The development of fullerene clusters formed by coupling fullerenes with bifunctional coupling agents and subsequent derivatization with reactive arms, which are then applied as a polymer film on a substrate, creating a three-dimensional network with intrinsically low dielectric constants and enhanced mechanical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If existing dielectric materials are used, then the dielectric constant requirement is met, but thermal stability and mechanical strength are insufficient
Solution Approach 1:
The patent employs composite materials by combining fullerene clusters with silane-based reactive arms to form a hybrid polymer network. This composite structure integrates the low dielectric constant property of fullerene cages with the thermal stability and mechanical strength of the silane crosslinked network, resolving the contradiction between meeting dielectric requirements and achieving sufficient thermal-mechanical performance
Solution Approach 2:
The invention applies local quality by creating a heterogeneous network where fullerene clusters are distributed within the polymer matrix. The fullerene regions provide low dielectric constant locally, while the silane crosslinked regions provide thermal stability and mechanical strength, allowing different parts of the material to fulfill different functional requirements simultaneously
2Stability of the object's composition
If existing dielectric materials are used, then the dielectric constant requirement is met, but solubility is insufficient for film formation
Solution Approach 1:
The patent uses solubilizing groups as intermediaries attached to the fullerene clusters. These groups act as mediators that enable the otherwise insoluble fullerene structures to dissolve in common solvents, allowing solution processing while maintaining the core fullerene units' low dielectric constant property. The solubilizing groups facilitate film formation without compromising the dielectric performance
3Object-generated harmful factors
If simple fullerene structures are used, then low dielectric constant is achieved, but mechanical strength and adhesion are insufficient
Solution Approach 1:
The invention applies parameter changes by modifying the molecular weight, crosslinking density, and functional group composition of the polymer network. By adjusting these parameters, the material achieves optimal balance between maintaining low dielectric constant and enhancing mechanical strength and substrate adhesion through controlled crosslinking and molecular architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting fullerene polymer films exhibit improved thermal stability, mechanical strength, and excellent adhesion to substrates, making them suitable for use in microelectronic devices while maintaining low dielectric constants, essential for advanced microelectronic applications.
Implementation Method 1
a bifunctional coupling agent is added to two or more fullerenes (e.g., C60), whereby the fullerenes are coupled together to form a fullerene cluster
Implementation Method 2
The derivatized fullerene clusters are then dissolved in a solvent, and then applied onto a substrate
Implementation Method 3
The derivatized fullerene clusters are then dissolved in a solvent, and then applied onto a substrate
Implementation Method 4
the curing comprises heating to between about 80° C. to 200° C. in a moist atmosphere
Data Source
AI summary
This disclosure relates generally to polymeric networks of fullerene compounds, to methods of preparing precursors for such networks, and to their subsequent use as low dielectric constant materials in microelectronic devices.


