Functional-Group Photoresist for EUV Resolution and Throughput
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Solution Overview
Problem
As semiconductor devices shrink in size, the process windows for photolithographic processing have become tighter, necessitating advances to maintain the ability to scale down components and improve wafer exposure throughput.
Innovation Solution
A photoresist composition is developed with specific polymers and photoactive compounds that enhance chemical reactions upon exposure, allowing for improved pattern transfer and resolution, using extreme ultraviolet lithography with reflective masks and controlled baking processes to optimize solubility differences between exposed and unexposed regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wafer exposure throughput is increased through increased exposure power, then productivity is improved, but manufacturing precision deteriorates due to tighter process windows
Solution Approach 1:
The patent changes the chemical parameters of the photoresist composition by incorporating specific polymers with defined functional groups (carboxyl, hydroxyl, amine) and their corresponding ratios. This chemical parameter modification enables the resist to achieve both high sensitivity for fine pattern resolution and high throughput capability, resolving the contradiction between productivity and manufacturing precision.
Solution Approach 2:
The patent uses composite photoresist materials combining multiple polymer components with specific photoactive compounds. This composite approach creates a synergistic effect where the combination of polymers (with carboxyl, hydroxyl, and amine groups) and photoactive agents achieves both high resolution and high throughput performance that neither component could achieve alone.
2Manufacturing precision
If photoresist sensitivity is increased to improve pattern resolution, then manufacturing precision is improved, but productivity deteriorates due to longer exposure times
Solution Approach 1:
The patent modifies the photoresist composition parameters by controlling the ratios of specific polymer functional groups (carboxyl: 0.1-10 mmol/g, hydroxyl: 0.1-10 mmol/g, amine: 0.1-10 mmol/g) and their combinations. This parameter optimization enables the resist to achieve high sensitivity for fine pattern resolution while maintaining fast exposure kinetics for high productivity.
Solution Approach 2:
The patent employs composite photoresist formulations combining multiple polymer types with complementary functional groups and photoactive compounds. This composite structure creates multiple parallel reaction pathways that enhance both pattern resolution capability and exposure speed, eliminating the trade-off between sensitivity and productivity.
3Manufacturing precision
If photoresist layer thickness is decreased to improve resolution, then manufacturing precision is improved, but reliability deteriorates due to reduced etching resistance
Solution Approach 1:
The patent changes the chemical composition parameters of the photoresist by incorporating polymers with specific functional group ratios. This chemical parameter modification enables the thin photoresist layer to maintain adequate etching resistance despite reduced thickness, allowing precise fine feature patterning without sacrificing layer reliability during etching processes.
Solution Approach 2:
The patent uses composite photoresist materials with multiple polymer components that provide both fine pattern resolution and enhanced etching resistance. The composite structure combines polymers with carboxyl, hydroxyl, and amine groups that work synergistically to maintain layer integrity at thin thicknesses while enabling high-resolution patterning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise pattern formation and efficient transfer of patterns onto substrates, enhancing the ability to create smaller semiconductor features with higher density and performance.
Implementation Method 1
The photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: -C(=O)OH, -OH, -NH2, and combinations thereof. Upon exposure to actinic radiation, the photoactive compound initiates chemical reactions that modify the polymer structure.
Implementation Method 2
controlled baking processes to optimize solubility differences between exposed and unexposed regions
Data Source
AI summary
A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from:The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.