Functional Substrate Anchor-Hole Structure for Film Separation Resistance
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Solution Overview
Problem
Existing semiconductor devices with metal layers face issues such as film separation (peeling) due to poor bonding force between the metal layer and the substrate, leading to performance degradation and potential device failure, especially under high-temperature processes or mechanical stress.
Innovation Solution
A functional substrate is designed with a dielectric substrate having functional holes and anchor holes, where the first connection structure in the functional hole and the second connection structure in the anchor hole are made of the same material, enhancing the bonding and thermal stability of the conductive layer with the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal layers with thickness of several micrometers or tens of micrometers are used in semiconductor devices, then the electrical performance and current carrying capacity are improved, but the bonding force between the metal layer and the base substrate deteriorates, leading to film separation under high-temperature processes or mechanical impact
Solution Approach 1:
The patent divides the metal layer into multiple sub-layers (first metal layer, second metal layer, third metal layer) with different materials and functions. The first metal layer provides electrical connectivity, the second metal layer enhances bonding strength, and the third metal layer provides thermal stability. This segmentation allows each layer to optimize for its specific function, preventing film separation while maintaining electrical performance.
Solution Approach 2:
The patent employs composite material structure by combining different metal materials (e.g., copper, aluminum, tungsten) in a layered configuration. Each metal layer is selected for its specific properties: copper for high conductivity, aluminum for lightweight and cost-effectiveness, and tungsten for high melting point and thermal stability. This composite approach enhances overall bonding strength and thermal stability while preventing film separation.
2Ease of manufacture
If high-temperature processes (above 200°C for dielectric layer, above 240°C for reflow soldering) are used during manufacturing and packaging, then the device fabrication and assembly are completed, but the stress generated during these processes causes device deformation
Solution Approach 1:
The patent modifies the thermal parameters of the metal layers by selecting materials with different thermal expansion coefficients and melting points. The third metal layer specifically uses high-melting-point materials (e.g., tungsten with melting point above 3400°C) that remain stable during high-temperature processes. This parameter change allows the device to withstand reflow soldering temperatures above 240°C without deformation.
Solution Approach 2:
The patent accounts for thermal expansion effects by carefully selecting metal materials with compatible thermal expansion coefficients. The layered metal structure is designed to accommodate differential thermal expansion during high-temperature processes, preventing stress concentration and device deformation. The third metal layer acts as a thermal buffer to protect the device structure during temperature cycling.
3Device complexity
If the bonding force between metal layer and substrate is poor, then the manufacturing process is simpler, but the film separation occurs during cutting and transferring processes, affecting device performance and causing failure
Solution Approach 1:
The patent applies preliminary action by pre-enhancing the bonding interface between the metal layers and the base substrate through surface treatment and adhesion promotion techniques during the manufacturing process. The second metal layer is specifically designed to provide strong adhesion to both the first metal layer and the base substrate, creating a robust bonding foundation before subsequent processing steps. This preliminary bonding enhancement prevents film separation during cutting and transferring operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively prevents the separation of the conductive layer from the dielectric substrate, improving the thermal stability and electrical properties of the device, thereby enhancing the reliability and performance of semiconductor devices.
Implementation Method 1
enhancing the bonding and thermal stability of the conductive layer with the substrate
Implementation Method 2
improving the thermal stability and electrical properties of the device
Data Source
AI summary
The present disclosure provides a functional substrate and a preparation method thereof, and belongs to the technical field of passive devices. A functional substrate of the present disclosure has a central region and a peripheral region surrounding the central region; the functional substrate includes: a dielectric substrate including a first surface and a second surface opposite to each other in a thickness direction thereof; the dielectric substrate includes functional holes and anchor holes each at least penetrating through the first surface; wherein the functional holes are located in the central region and the anchor holes are located in the peripheral region; the first connection structure is in the functional hole, the second connection structure is in the anchor hole, and the first connection structure and the second connection structure are made of the same material.