Funnel-Shaped Fin Isolation Structure for Leakage Control
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Solution Overview
Problem
Current semiconductor devices face challenges in effectively isolating between source/drains and other semiconductor devices, leading to issues such as short channel effects and charge carrier tunneling, which affect device performance and density.
Innovation Solution
The implementation of a funnel-shaped isolation structure with a greater width at the upper portion and smallest width at the lower portion, formed using a multi-layered deposition process, provides improved electrical barriers and structural support between neighboring fins and gate structures, reducing electron leaking and enhancing device density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional isolation structures are used between source/drains, then device density can be maintained, but electrical isolation is insufficient leading to short channel effects and charge carrier tunneling
Solution Approach 1:
The isolation structure is divided into multiple segments: a first isolation structure between first source/drain regions, and a second isolation structure between second source/drain regions. This segmentation allows each isolation structure to be optimized independently for its specific location, improving electrical isolation effectiveness while managing overall device complexity.
Solution Approach 2:
Different isolation structures are provided at different locations within the device. The first isolation structure has specific characteristics optimized for isolating first source/drain regions, while the second isolation structure has different characteristics optimized for isolating second source/drain regions. This local quality approach ensures that each isolation structure is tailored to its specific functional requirements, thereby improving overall electrical isolation performance.
2Reliability
If isolation structures are added to reduce electron leaking, then electrical performance improves, but manufacturing process complexity increases
Solution Approach 1:
The first isolation structure is formed before the first source/drain regions are formed, and the second isolation structure is formed before the second source/drain regions are formed. This preliminary action allows the isolation structures to be integrated into the manufacturing process flow without requiring additional complex steps, as they are prepared in advance during earlier processing stages.
Solution Approach 2:
The formation of isolation structures is merged with the existing source/drain region formation process. By coordinating the timing and methodology of isolation structure creation with source/drain region creation, the patent reduces overall manufacturing complexity while still achieving the desired electrical performance improvements.
3Reliability
If multi-layered deposition process is used to create funnel-shaped isolation structure, then electrical barrier effectiveness increases, but manufacturing precision requirements increase
Solution Approach 1:
The isolation structure is formed as a multi-layered structure with distinct layers deposited at different stages. This segmentation of the deposition process into multiple controlled steps allows for better control of each individual layer's properties, thereby managing manufacturing precision requirements while achieving superior electrical barrier effectiveness through the combined multi-layer structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces electron leaking and charge carrier tunneling, improving the electrical performance and density of semiconductor devices by creating a robust electrical barrier between fins and gate structures.
Implementation Method 1
the isolation fin providing electrical isolation between the first fin and the second fin of the set of fins
Implementation Method 2
formed using a multi-layered deposition process
Data Source
AI summary
Some implementations described herein provide a method that includes forming a set of fins of a device, where the set of fins comprises an isolation fin disposed between a first fin and a second fin of the set of fins. The method also includes forming an isolation structure on at least one side of the isolation fin, with the isolation fin providing electrical isolation between the first fin and the second fin of the set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming a funnel-shaped isolation structure between a first set of fins and a second set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming, after forming a first gate structure and a second gate structure, an isolation structure between the first gate structure and the second gate structure.