Fuse Array Programming Verification via Voltage Difference Current
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Solution Overview
Problem
Semiconductor devices with anti-fuse arrays face challenges in ensuring that all fuses are programmed correctly due to variations in their properties, requiring different voltage levels for rupture, making it difficult to determine if an appropriate voltage is applied and if the fuses have been correctly ruptured.
Innovation Solution
A circuit and method for a semiconductor device that includes a fuse array, a voltage generation unit for creating a preset measurement voltage, and a measurement unit to supply this voltage along with an external voltage, allowing for the selection of fuses and measurement of current through them to determine if they have been ruptured correctly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If anti-fuses are programmed using a high power supply voltage to rupture the dielectric material, then the fuses can be programmed, but it is difficult to determine whether an appropriate voltage level is applied and whether the fuses have been correctly ruptured
Solution Approach 1:
The patent applies preliminary action by performing a measurement of the fuse resistance before the actual programming operation. The measurement unit measures the resistance value of each fuse element, and based on this pre-measurement, the control unit determines whether to apply programming voltage and at what level, thereby avoiding unnecessary high-voltage application and enabling verification of proper rupture.
Solution Approach 2:
The patent implements feedback by using the measurement unit to continuously monitor the resistance value of fuse elements during and after programming. The control unit receives this feedback information and adjusts the programming voltage accordingly, determining whether the fuse has been correctly ruptured based on the measured resistance changes, thus providing real-time verification of programming status.
2Quantity of substance
If multiple anti-fuses are arranged in an array to increase data storage capacity, then the storage capacity increases, but each anti-fuse requires different voltage levels for rupture due to property variations
Solution Approach 1:
The patent applies local quality by providing individualized programming conditions for each fuse element in the array. The control unit determines the programming voltage for each fuse based on its specific resistance value measured by the measurement unit, allowing each fuse to receive the appropriate voltage level tailored to its properties rather than applying a uniform voltage to all fuses.
Solution Approach 2:
The patent implements parameter changes by dynamically adjusting the programming voltage parameter based on the measured resistance value of each fuse element. The control unit modifies the voltage level according to the specific electrical characteristics of each fuse, enabling accurate programming of multiple fuses with varying properties without requiring manual calibration of each individual fuse.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate determination of whether each fuse in the array has been ruptured to the intended level by measuring the current generated by the voltage difference, ensuring consistent programming across the array.
Implementation Method 1
outputting a current, which is caused by voltage difference between the first and second measurement voltages and passes through one or more of the multiple fuses
Implementation Method 2
sensing an amount of current flowing through each of the electrical paths
Data Source
AI summary
A semiconductor device may include: a fuse array including a plurality of fuses; a voltage generation unit suitable for generating a first measurement voltage having a preset level; and a measurement unit suitable for supplying the first measurement voltage to a sourcing node of the fuse array and a second measurement voltage, which is provided from an external through a first pad, to a sinking node of the fuse array, and outputting a current, which is caused by voltage difference between the first and second measurement voltages and passes through one or more of the multiple fuses, through the first pad.