Fuse Circuit Self-Boosting Voltage Generation Layout Optimization
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Solution Overview
Problem
Conventional fuse circuits in semiconductor apparatuses occupy significant layout space due to the need for separate voltage generation units and power transmission lines, and have fixed sensing sensitivity without control, making them inefficient in terms of layout area utilization and programming precision.
Innovation Solution
A fuse circuit that utilizes self-boosting units to generate stress voltages and a cross-coupled latching amplification unit to sense changes in voltage levels, allowing for controlled stress application and adjustable sensing sensitivity, thereby reducing layout area requirements and improving programming precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate voltage generation units are used to generate fuse stress voltages, then the fuse can be programmed, but the layout space is significantly occupied
Solution Approach 1:
The patent merges the voltage generation function into the existing I/O pad structure. The I/O pad circuit is configured to generate fuse stress voltages by utilizing the power supply voltage and ground voltage already present at the pad, eliminating the need for separate voltage generation units. This integration maintains fuse programming capability while significantly reducing the layout area occupied by voltage generation circuits.
2Reliability
If power transmission lines are added to transmit fuse stress voltages, then the fuse can be programmed, but the layout area is occupied and power loss increases
Solution Approach 1:
The patent extracts the voltage generation function from the internal circuitry and relocates it to the I/O pad interface. By generating fuse stress voltages at the pad level using the power supply and ground already available at the pad, the invention eliminates the need for dedicated power transmission lines to deliver fuse programming voltages, thereby reducing layout area and minimizing power loss.
3Device complexity
If the fuse state output unit has fixed sensing sensitivity, then the circuit is simple, but the sensing precision cannot be controlled
Solution Approach 1:
The patent introduces a sensing sensitivity control unit that dynamically adjusts the reference voltage level based on process conditions and temperature. The control unit modifies the reference voltage to optimize the comparison threshold for detecting fuse state changes, enabling controlled and adjustable sensing sensitivity while maintaining reasonable circuit complexity through systematic voltage adjustment.
4Reliability
If conventional voltage generation units are used, then fuse stress can be applied, but the circuit occupies significant layout space
Solution Approach 1:
The patent makes the I/O pad circuit multi-functional by enabling it to perform both its standard I/O function and fuse programming function. The pad circuit generates fuse stress voltages using the power supply and ground already present at the pad, allowing a single circuit structure to serve multiple purposes and thereby reducing overall device complexity and layout space.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed fuse circuit efficiently changes the electrical connection state of the fuse with reduced layout area usage and enhanced sensing sensitivity, enabling stable and precise programming operations.
Implementation Method 1
a plurality of self boosting units configured to perform self boosting operations, generate stress voltages, and supply the generated stress voltages to the fuse
Implementation Method 2
The electrical connection characteristic of a fuse may change when a laser beam or an electrical stress is applied to the fuse, which may in turn change the electrical resistance value of the fuse
Implementation Method 3
an amplification unit configured to sense a change in a voltage level of a precharge voltage supplied to the fuse, with reference to a reference voltage, and output a fuse state signal
Data Source
AI summary
Various embodiments of a fuse circuit of a semiconductor apparatus are disclosed. In one exemplary embodiment, the fuse circuit may include a fuse whose electrical connection state can be changed by an electrical stress applied thereto and a plurality of self boosting units configured to perform self boosting operations under the control of a rupture enable signal. The self boosting units may also be configured to generate stress voltages and supply the generated stress voltages to the fuse. The fuse circuit may also include a precharge unit configured to supply a precharge voltage to the fuse in response to a precharge signal and a cross-coupled latching amplification unit configured to sense a change in a voltage level of the precharge voltage supplied to the fuse, with reference to a reference voltage, and output a fuse state signal.