Fuse Structure with Concave-Convex Insulating Layer for Copper Migration Control

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Solution Overview

Problem

In highly integrated semiconductor devices, the migration of conductive material, such as copper, after the blowing process leads to thermal degradation and electrical connectivity issues between fuses, reducing operational stability and increasing resistance, which limits integration and increases the risk of power loss due to leakage currents.

Innovation Solution

A concave-convex insulating layer is formed with recesses and grooves to lock conductive material in place, preventing migration and ensuring that blown fuses remain disconnected, using copper as the conductive material while maintaining low resistance values.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If copper is used as conductive material in highly integrated semiconductor devices, then resistance values are reduced and integration is improved, but conductive material migration occurs after blowing process causing thermal degradation and electrical connectivity issues

Engineering Contradiction:
Improveoperational stabilityVSAvoidconductive material migration
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The insulating layer is segmented into multiple recesses along the fuse, creating distinct confinement zones for the conductive material. This segmentation prevents continuous migration paths by dividing the potential migration route into isolated segments bounded by the recesses.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The concave-convex insulating layer acts as an intermediary structure between the conductive material and the surrounding environment. The recesses and grooves form a mediator that physically restricts and locks the conductive material in place, preventing direct contact and interaction that would enable migration.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If fuse density is increased for high integration, then device size is reduced, but interval between adjacent fuses decreases causing influence on neighboring fuses during blowing process

Engineering Contradiction:
Improveintegration densityVSAvoidblowing process precision
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The insulating layer is segmented into multiple recesses along the fuse, creating distinct confinement zones for the conductive material. This segmentation prevents continuous migration paths by dividing the potential migration route into isolated segments bounded by the recesses.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulating layer is modified locally at specific positions along the fuse with recesses and grooves, creating zones of enhanced material confinement. This local quality change allows precise control of conductive material behavior at critical locations without affecting the entire fuse structure or neighboring fuses.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If conventional flat insulating layer is used, then manufacturing is simple, but conductive material migrates freely causing blown fuses to reconnect

Engineering Contradiction:
Improveinsulating layer fabricationVSAvoidfuse disconnection stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The recesses and grooves are formed in the insulating layer before the fuse is blown, creating a pre-configured containment structure. This preliminary action ensures that when conductive material migration occurs during or after the blowing process, the material is immediately constrained by the pre-existing recesses and grooves, preventing reconnection.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The insulating layer is modified with concave-convex features including recesses and grooves that create curved surfaces. These curved geometries provide mechanical interlocking with the conductive material, enhancing the locking effect compared to flat surfaces through geometric confinement rather than just friction or adhesion.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Data Source

PatentUS9196527B2Fuse structure for high integrated semiconductor device
Publication Date: 2015.11.24 MIMIRIP LLC
  • US9196527B2 patent drawing
  • US9196527B2 patent drawing
  • US9196527B2 patent drawing

AI summary

The present invention provides a technology capable of improving an operation reliability of a semiconductor device. Particularly, a fuse material which constitutes the copper can be prevented from migrating being locked in the recesses or the grooves after a blowing process. A semiconductor device includes an insulating layer including a concave-convex-shaped upper part; and a fuse formed on the insulating layer.