Fuse Protection for Semiconductor Memory Overcurrent

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Solution Overview

Problem

Conventional semiconductor memory devices, such as SSDs with flash memory, are vulnerable to malfunctions due to overcurrents that can cause latch-up, leading to potential data loss and system instability.

Innovation Solution

Incorporating a fuse in the external power supply line of the SSD to protect internal circuits from overcurrents by interrupting excessive current flow, thereby preventing latch-up and ensuring the integrity of user data stored in flash memory chips.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If no fuse is provided in the power supply line, then the device complexity is reduced and manufacturing is simpler, but the reliability deteriorates due to vulnerability to overcurrent and latch-up

Engineering Contradiction:
Improveprotection from overcurrentVSAvoidcircuit configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A fuse is disposed in the external power supply line to interrupt excessive current flow before it can reach and damage the flash memory chips and other internal circuits. This preliminary protective measure prevents latch-up conditions and ensures data integrity while maintaining a relatively simple overall device structure.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the fuse is disposed closer to the external connecting terminal than the power supply circuit, then the protection effectiveness is improved, but the device complexity increases due to specific layout requirements

Engineering Contradiction:
Improveprotection effectivenessVSAvoidlayout configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The fuse is specifically positioned in the external power supply line closer to the external connecting terminal than the power supply circuit. This localized placement ensures that the fuse is in the optimal position to interrupt excessive current flow before it enters the internal circuits, providing maximum protection effectiveness while accepting the increased layout complexity.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The implementation of a fuse in the power supply line effectively prevents malfunctions and data loss by safeguarding the flash memory from overcurrents, ensuring reliable operation and minimizing heat-related adverse effects on the host system.

Implementation Method 1

a fuse disposed in the external power supply line... to protect internal circuits from overcurrents by interrupting excessive current flow

Methodology Applied
Scientific EffectJoule Heating: Joule Heating

Implementation Method 2

the fuse is disposed closer to the external connecting terminal than the power supply circuit is to the external connecting terminal

Methodology Applied
Scientific EffectMelting: Melting

Data Source

PatentEP2225648B1Semiconductor memory device
Publication Date: 2013.08.28 KK TOSHIBA
  • EP2225648B1 patent drawingFigure 1
  • EP2225648B1 patent drawingFigure 2~3

AI summary

A plurality of flash memories 2, a connector for establishing connection with a host apparatus 100, a cache memory 4 for data transmission between the flash memories 2 and the host apparatus 100, a drive control circuit 3 that controls the data transmission between the flash memories 2 and the host apparatus 100, and a power supply circuit 5 that converts an external power supply voltage into an internal power supply voltage are mounted on a substrate. A fuse 10 that protects at least the flash memories 2 from an overcurrent is provided on the substrate.