Semiconductor Fuse Structure for Floating Inductor Charge Grounding

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Solution Overview

Problem

During the integration of semiconductor device dies, charge accumulation in electrically floating structures can adversely affect the electrical performance of semiconductor packages, leading to potential damage.

Innovation Solution

A fuse structure is disposed in the device die to electrically connect the electrically floating structure to ground, allowing charges to be discharged, thereby protecting the semiconductor package from charge-induced damages. The fuse structure is configured within the device die and is blown after the semiconductor device is completed to restore functionality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If device dies are integrated in one package to achieve more functions, then productivity and functionality are improved, but charge accumulation in electrically floating structures occurs which adversely affects electrical performance

Engineering Contradiction:
ImprovefunctionalityVSAvoidelectrical performance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The fuse structure is pre-configured within the device die during manufacturing, establishing a discharge path before charge accumulation problems occur. This preliminary preparation allows the fuse to be activated later to protect the package when charge accumulation becomes an issue, resolving the contradiction between integrated functionality and electrical performance reliability.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The fuse structure acts as an intermediary element between the electrically floating structures and ground. It provides a controlled discharge path that mediates the charge accumulation problem, allowing safe dissipation of charges while protecting the overall package integrity, thus maintaining both high functionality and electrical performance.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If fuse structure is disposed in device die to provide discharge path, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improveprotection from charge-induced damagesVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The fuse structure is merged with the existing device die architecture, integrating the protective function into the current device structure rather than adding completely separate protective components. This integration minimizes the increase in device complexity while achieving the reliability improvement of protecting against charge-induced damages.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The fuse structure serves multiple functions: it provides a discharge path for charge accumulation protection, maintains electrical connection during normal operation, and can be activated on-demand to protect the package. This multi-functionality justifies the added structural element by delivering multiple benefits from a single integrated component.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The implementation of the fuse structure effectively mitigates charge accumulation issues, ensuring the electrical performance and reliability of the semiconductor package by providing a discharge path for accumulated charges to ground.

Implementation Method 1

A fuse structure is disposed in the device die to electrically connect the electrically floating structure to ground, allowing charges to be discharged

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS11854969B2Semiconductor structure and method for forming thereof
Publication Date: 2023.12.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11854969B2 patent drawing
  • US11854969B2 patent drawing
  • US11854969B2 patent drawing

AI summary

A semiconductor structure and a method for forming the semiconductor structure are disclosed. The method includes the following operations. A first integrated circuit component having a fuse structure is received. A second integrated circuit component having an inductor is received. The second integrated circuit component is bonded to the first integrated circuit component. The inductor is electrically connected to the fuse structure, wherein the inductor is electrically connected to a ground through the fuse structure.