Fuse Latch Array Voltage Control for Semiconductor Repair Storage

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Solution Overview

Problem

As semiconductor storage capacity increases, the number of fuses in the fuse block grows, leading to higher current consumption during the boot-up operation when reading and storing repair information, which can prolong the time required for initialization.

Innovation Solution

A repair information storage circuit that includes a controller generating voltage control signals to adjust the threshold voltage of a fuse latch array, allowing for efficient storage and retrieval of repair information during both boot-up and normal operation periods, thereby reducing current consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the number of fuses in the fuse block is increased to store more repair information, then the storage capacity is improved, but the current consumption during boot-up operation increases

Engineering Contradiction:
Improvenumber of fusesVSAvoidcurrent consumption
Core Design Contradiction:
Quantity of substanceVSUse of energy by moving object

Solution Approach 1:

The patent applies parameter changes by dynamically adjusting the threshold voltage of the fuse latch array based on the operational mode (boot-up vs. normal operation). During boot-up, the threshold voltage is set to a first level to enable efficient reading of repair information from the fuse block, while during normal operation, it is adjusted to a second level to reduce current consumption. This resolves the contradiction by optimizing the electrical parameters of the fuse latch array according to the operational context.

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If the number of fuses is increased to accommodate more repair information, then the storage capacity is improved, but the boot-up time increases

Engineering Contradiction:
Improvenumber of fusesVSAvoidboot-up time
Core Design Contradiction:
Quantity of substanceVSLoss of time

Solution Approach 1:

The patent implements preliminary action by pre-reading and storing repair information from the fuse block into the fuse latch array during the boot-up operation. This preliminary loading of data into faster-access memory (fuse latch array) allows the system to quickly retrieve repair information without repeatedly accessing the fuse block, thereby reducing the overall boot-up time despite having a large number of fuses.

Inventive Principle:
Principle #10Preliminary action

3Speed

If repair information is read and stored in advance during boot-up, then the access speed is improved, but the current consumption increases

Engineering Contradiction:
Improveaccess speedVSAvoidcurrent consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent applies dynamics by making the threshold voltage of the fuse latch array adjustable rather than fixed. The threshold voltage is dynamically changed based on the operational mode: during boot-up, it is set to a first threshold level that enables fast reading of repair information, while during normal operation, it is adjusted to a second threshold level that reduces current consumption. This dynamic adjustment allows the system to optimize between speed and energy consumption based on operational needs.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS9793009B2Repair information storage circuit and semiconductor apparatus including the same
Publication Date: 2017.10.17 SK HYNIX INC
  • US9793009B2 patent drawing
  • US9793009B2 patent drawing
  • US9793009B2 patent drawing

AI summary

A repair information storage circuit may include a fuse block, a controller, and a fuse latch array. The fuse block provides a boot-up enable signal and repair information. The controller generates a voltage control signal in response to the boot-up enable signal. The fuse latch array stores repair information provided from the fuse block. The voltage control signal, which is used as a bulk bias of a transistor formed in the fuse latch array, is adjustable.