Fuse Structure Layout With Contact Interconnect for Higher Density
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Solution Overview
Problem
Current semiconductor structures face limitations in feature size and density, hindering further miniaturization and performance enhancement in integrated circuits.
Innovation Solution
A semiconductor structure comprising a substrate, fuses, a contact structure, and a dielectric layer, where the fuses are electrically connected through the contact structure, allowing for reduced feature size and increased integration density by optimizing the placement and alignment of these components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional 2D integrated circuit layouts are used, then manufacturing process is simpler, but feature size and density are limited
Solution Approach 1:
The patent implements a three-dimensional stacked chip design where multiple fuse blocks are arranged vertically across different layers. Fuse blocks from different layers are interconnected through contact structures that penetrate through intermediate dielectric layers, enabling spatial multiplexing of fuse resources and significantly increasing integration density beyond what is achievable with planar 2D layouts.
Solution Approach 2:
The patent employs a hierarchical structure where fuse blocks are nested within larger fuse regions, which are in turn nested within the overall semiconductor device. Multiple fuse blocks are stacked vertically with each containing smaller functional units, creating a nested arrangement that maximizes the use of available three-dimensional space while maintaining organizational structure.
2Quantity of substance
If feature size is reduced to increase density, then integration density improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent divides the fuse structure into multiple discrete fuse blocks arranged in different layers, with each block containing segmented fuse elements. This segmentation allows for independent optimization of each block's feature size and spacing, reducing the overall precision requirements compared to a monolithic high-density structure. The segmented approach also enables modular manufacturing and testing.
Solution Approach 2:
The patent introduces intermediate dielectric layers and contact structures as mediators between fuse blocks in different layers. These intermediary elements provide mechanical support and electrical connection while maintaining appropriate spacing between closely packed fuse blocks, thereby reducing the direct precision requirements between adjacent fuse features and allowing for relaxed manufacturing tolerances.
Data Source
AI summary
A semiconductor structure includes a substrate, a first fuse, a second fuse, a contact structure, and a dielectric layer. The first fuse is located in a fuse region of the substrate and includes a first fuse active region having a first portion and a second portion. The second fuse is located in the fuse region of the substrate and includes a second fuse active region having a third portion and a fourth portion. The contact structure interconnects the second portion and the third portion. The dielectric layer is located between the contact structure and the fuse region of the substrate.