Fuse Pad and Bond Pad Formation Using Single Mask Etching
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Solution Overview
Problem
The existing semiconductor fabrication processes for forming fuse windows and bond pads require multiple masks and etching steps, which are costly, time-consuming, and can result in undesired removal of dielectric material and residual coatings, affecting fuse performance.
Innovation Solution
A method that uses a single mask to define both the fuse window and bond pad areas simultaneously, employing a passivation layer and a selective etch process to expose the bond pad surface without plasma etching, thereby reducing processing steps and avoiding residual materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks and etching steps are used to form fuse windows and bond pads, then the fabrication process can achieve precise patterning, but the processing time and cost increase significantly
Solution Approach 1:
The patent combines the formation of fuse windows and bond pads into a single etching step using one mask layer, merging two previously separate fabrication processes. This integration maintains patterning precision while significantly reducing the number of processing steps, photolithography operations, and associated costs.
Solution Approach 2:
The single mask layer serves multiple functions by simultaneously defining both the fuse window openings and bond pad openings. This multi-functional approach eliminates the need for separate masks for each feature type, reducing processing complexity while maintaining the precision required for both structures.
2Manufacturing precision
If multiple masks and etching steps are used, then complete pattern definition is achieved, but residual coatings and dielectric material loss occur
Solution Approach 1:
The patent employs a selective etch process that changes the etching parameters to achieve differential etching rates. This allows the etch to selectively remove dielectric material in fuse window areas while preserving dielectric material in bond pad areas, preventing unwanted material loss and residual coatings.
Solution Approach 2:
The introduced layer acts as an intermediary that protects specific areas during the etching process. This layer enables selective removal of dielectric material where needed while protecting areas where material should be retained, thus achieving complete pattern definition without excessive material loss.
3Ease of operation
If plasma etching is used to expose bond pad surface, then the bond pad is revealed, but residual materials affect fuse performance
Solution Approach 1:
The patent uses a disposable introduced layer that is specifically designed to be removed after serving its protective function. This layer enables bond pad exposure through non-plasma etching while preventing residual materials from contaminating the fuse structures, thereby protecting fuse performance.
Solution Approach 2:
The patent extracts the bond pad exposure function from the plasma etching process by using a selective chemical etch approach. This separates the bond pad revelation step from the potentially contaminating plasma process, achieving the desired exposure without compromising fuse performance through residual material contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of photolithography steps, lowers fabrication costs, and minimizes dielectric material loss, resulting in improved fuse performance and reduced processing complexity.
Implementation Method 1
employing a passivation layer and a selective etch process to expose the bond pad surface
Data Source
AI summary
The present disclosure relates to a semiconductor device. A fuse layer is arranged within a first dielectric layer. A bond pad is arranged on the first dielectric layer. A second dielectric layer is arranged along sidewall and upper surfaces of the bond pad. A passivation layer is arranged over the first and second dielectric layers, and the passivation layer having a bond pad opening overlying the bond pad and a fuse opening overlying the fuse layer. The bond pad has a bottom surface that is co-planar with a bottom surface of the passivation layer.