Fuse Protective Layer Spacing for Laser Repair Damage Prevention

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Solution Overview

Problem

The increasing number of memory cell defects in semiconductor memory devices during manufacturing poses a challenge, as existing repair processes, such as cutting fuses with a laser, can damage surrounding components and are inefficient in preventing damage propagation.

Innovation Solution

A semiconductor device design that includes fuses protected by a protective layer and a fuse protective layer, spaced apart to prevent damage from laser-based repair processes, with the fuse protective layer potentially divided into lines and protruding beyond the fuses' edges, and both lateral surfaces of the fuses covered by an insulating layer, using materials like silicon oxide, silicon nitride, or silicon oxynitride.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of repair

If a laser is used to cut fuses for repairing defective memory cells, then the repair process can be performed, but damage propagates to surrounding components including the protective layer

Engineering Contradiction:
Improverepair processVSAvoiddamage propagation
Core Design Contradiction:
Ease of repairVSObject-affected harmful factors

Solution Approach 1:

A fuse protective layer is introduced as an intermediary element between the fuse and the main protective layer. This intermediate layer absorbs and isolates the damage caused by laser cutting, preventing crack propagation to the main protective layer and surrounding components while still allowing the laser to effectively cut the fuse.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The fuse protective layer is formed in advance before the repair process. This pre-formed protective structure acts as a cushion or buffer zone that prevents damage from spreading to critical components during the subsequent laser cutting operation, thereby protecting the integrity of the device.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

2Reliability

If the fuse protective layer is spaced apart from the protective layer, then damage propagation is prevented, but the structural complexity increases

Engineering Contradiction:
Improvedamage preventionVSAvoidlayer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The protective structure is segmented into distinct functional layers: the main protective layer and the separate fuse protective layer. This segmentation allows each layer to perform its specific function independently - the main protective layer protects the overall device while the fuse protective layer specifically protects against laser damage during repair, achieving reliable damage prevention through functional division.

Inventive Principle:
Principle #1Segmentation

3Reliability

If both lateral surfaces of fuses are covered by insulating layer, then electrical isolation is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveelectrical isolationVSAvoidmanufacturing process
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The insulating layer formation is merged with the existing fuse protective layer structure. By integrating the electrical isolation function into the already-formed protective layer architecture, the patent achieves comprehensive electrical isolation of fuse lateral surfaces without requiring separate manufacturing steps, thereby maintaining ease of manufacture while improving reliability.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS8044490B2Semiconductor device including fuse
Publication Date: 2011.10.25 SAMSUNG ELECTRONICS CO LTD
  • US8044490B2 patent drawing
  • US8044490B2 patent drawing
  • US8044490B2 patent drawing

AI summary

Provided is a semiconductor device including a fuse, in which a insulating layer surrounding the fuse or metal wiring is prevented from being damaged due to the cut of a fuse, which can occur when a repair process is performed. The semiconductor device includes a conductive line formed on a semiconductor layer, a protective layer formed on the conductive line, one or more fuses that are electrically connected to the conductive line, and a fuse protective layer formed on the one or more fuses, and spaced apart from the protective layer.