Fuse Element Silicide Layer for Stable Cutting
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Solution Overview
Problem
The reliability of semiconductor devices incorporating MISFET and fuse elements is compromised due to variations in resistance after cutting, which can lead to leak paths and reduced long-term reliability.
Innovation Solution
A semiconductor device design where a metal silicide layer is formed on both the upper and side surfaces of the silicon pattern for the fuse element, allowing for stable cutting and increased resistance post-cutting by ensuring uniform Joule heat distribution, thereby improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a fuse element is cut by blowing with Joule heat, then the circuit can be eliminated or adjusted, but resistance variations and leak paths occur reducing reliability
Solution Approach 1:
The patent applies local quality by forming a metal silicide layer specifically on the side surface of the silicon pattern for the fuse element, while the gate electrode structure maintains its conventional configuration. This localized modification ensures that Joule heat is generated uniformly along the entire circumference of the fuse element during cutting, preventing resistance variations and leak paths without affecting other device components.
Solution Approach 2:
The metal silicide layer is formed on the side surface of the silicon pattern in advance, before the fuse element cutting process. This preliminary action ensures that when Joule heat is applied to cut the fuse element, the heat is uniformly distributed along the cutting path, preventing the formation of leak paths and ensuring consistent resistance characteristics after cutting.
2Manufacturing precision
If a metal silicide layer is formed on the silicon pattern for fuse element, then uniform Joule heat distribution is achieved improving cutting stability, but device structure becomes more complex
Solution Approach 1:
The patent implements local quality by selectively forming the metal silicide layer only on the side surface of the silicon pattern for the fuse element, not on the entire device structure. This localized approach improves cutting stability through uniform Joule heat distribution while minimizing the increase in overall device complexity, as only a specific region is modified.
Solution Approach 2:
The metal silicide layer serves multiple functions: it acts as a heating element for uniform Joule heat generation during fuse cutting, and it also serves as part of the fuse element structure itself. This multi-functionality improves cutting stability without requiring additional separate components, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design ensures stable cutting and maintains high resistance of the fuse element post-cutting, enhancing the long-term reliability of the semiconductor device by suppressing variations in resistance and preventing leak paths.
Implementation Method 1
a method of blowing the fuse element with Joule heat by passing a current is used
Data Source
AI summary
Reliability of a semiconductor device is improved. The semiconductor device includes a silicon pattern for a fuse element, a metal silicide layer formed on an upper surface and a side surface of the silicon pattern, a gate electrode for MISFET, and a metal silicide layer formed on an upper surface of the gate electrode. The height from the lower surface of the silicon pattern to the lower end of the metal silicide layer is lower than the height from the lower surface of the gate electrode to the lower end of the metal silicide layer.