Fuse Structure Design for Semiconductor Repair
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving efficient fusing performance during the repair process, where fuses may not blow completely, affecting the replacement of bad cells with redundant cells.
Innovation Solution
The semiconductor device incorporates a fuse structure with a fuse via pattern and fuse line pattern made of copper and additional elements like manganese, aluminum, or cobalt, with varying widths and thicknesses, and a wire structure with a uniform cross-sectional area, to enhance fusing performance by weakening electro-migration characteristics and controlling the fusing position.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the fuse structure uses the same cross-sectional area as the wire structure, then the manufacturing process is simplified, but the fusing performance is insufficient and the fuse does not blow completely
Solution Approach 1:
The fuse line pattern is designed with a first portion having a first cross-sectional area and a second portion having a second cross-sectional area smaller than the first cross-sectional area. This local variation in cross-sectional area creates a weak point in the fuse structure that facilitates complete blowing while maintaining overall structural integrity. The first portion provides sufficient current carrying capacity during normal operation, while the second portion ensures reliable fusing when needed.
2Reliability
If the fuse via pattern has the same width as the wire via pattern, then the manufacturing precision is maintained, but the electro-migration characteristics are not weakened and fusing is inefficient
Solution Approach 1:
The fuse via pattern is designed with a specific width that differs from the wire via pattern width. This local dimensional variation creates different electro-migration characteristics in the fuse structure compared to the wire structure. The fuse via pattern's dimensions are optimized to facilitate easier blowing while the wire via pattern maintains its original dimensions for reliable signal transmission.
3Reliability
If the fuse line pattern has uniform thickness, then the manufacturing process is simplified, but the fusing position cannot be controlled and the fuse does not blow completely
Solution Approach 1:
The fuse line pattern is designed with a first portion having a first thickness and a second portion having a second thickness smaller than the first thickness. This local thickness variation creates a controlled weak point that determines where the fuse will blow. The first portion maintains sufficient current carrying capacity while the second portion ensures complete blowing at a specific location, improving fusing reliability.
4Reliability
If the fuse barrier layer has the same thickness as the wire barrier layer, then the manufacturing process is simplified, but the fusing performance is not optimized
Solution Approach 1:
The fuse barrier layer is designed with a thickness that differs from the wire barrier layer thickness. This local variation in barrier layer thickness optimizes the fusing performance by controlling the electrical and physical properties at the fuse structure. The thinner or thicker barrier layer (depending on specific design) facilitates easier blowing while the wire barrier layer maintains its original thickness for reliable wire protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves fusing performance by ensuring the fuse structure blows easily and efficiently, limiting the fused position, thereby enhancing the repair process and overall device performance.
Implementation Method 1
The semiconductor device incorporates a fuse structure with a fuse via pattern and fuse line pattern made of copper and additional elements like manganese, aluminum, or cobalt, with varying widths and thicknesses, and a wire structure with a uniform cross-sectional area, to enhance fusing performance by weakening electro-migration characteristics and controlling the fusing position.
Data Source
AI summary
A semiconductor device includes a substrate having a fuse area and a device area; a fuse structure in an insulating layer of the fuse area, and a wire structure in the insulating layer of the device area. The fuse structure includes a fuse via, a fuse line electrically connected to a top end of the fuse via pattern and extending in a direction. The wire structure includes a wire via, a wire line electrically connected to a top end of the wire via and extending in the first direction. A width in the first direction of the fuse via is smaller than a width in the first direction of the wire via.