Fuse Structure With Varying Conductive Pattern Thickness
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Solution Overview
Problem
Current fuse structures in semiconductor devices lack efficient methods to improve fusing performance, particularly in achieving optimal thickness variations in conductive patterns to enhance programming and reliability.
Innovation Solution
A fuse structure is designed with conductive patterns of varying thicknesses, where the thickness differs across regions to increase resistance and facilitate programming by applying electrical signals, incorporating fin patterns and insulating layers to manage current density effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a uniform thickness conductive pattern is used, then the manufacturing process is simple, but the fusing performance and current density control are insufficient
Solution Approach 1:
The conductive pattern is designed with different thicknesses in different regions: a first thickness in the first region and a second thickness in the second region. This local variation in thickness allows for optimized current density distribution and improved fusing performance in specific areas without requiring complete restructuring of the entire conductive pattern.
Solution Approach 2:
The invention introduces thickness variation as an additional design dimension beyond the planar layout. By controlling the vertical dimension (thickness) of the conductive pattern in different regions, the design achieves better current density control and fusing characteristics without increasing planar complexity.
2Reliability
If the conductive pattern thickness is increased, then the resistance is reduced, but the programming efficiency and reliability are compromised
Solution Approach 1:
Different thicknesses are assigned to different regions of the conductive pattern based on their specific functional requirements. The first region has a first thickness optimized for its programming characteristics, while the second region has a second thickness optimized for its characteristics, allowing each region to achieve optimal performance without compromising overall manufacturing precision.
3Productivity
If the conductive pattern thickness is decreased, then the resistance is increased, but the current density control and programming efficiency are reduced
Solution Approach 1:
The conductive pattern employs different thicknesses in different regions to balance programming efficiency and fusing reliability. Regions requiring higher programming efficiency have thinner sections for increased resistance and current density, while regions requiring higher reliability have thicker sections for better current carrying capacity and stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed fuse structure enhances fusing performance by allowing precise control of current density and resistance, improving programming efficiency and reliability through strategic thickness variations in conductive patterns.
Implementation Method 1
The conductive pattern has a first thickness on the first fin pattern, and a second thickness on the field insulating layer, and the first thickness and the second thickness differ from each other. The first thickness is less than the second thickness.
Implementation Method 2
a fuse is programmed by applying an electric signal to both ends of the conductive pattern, wherein a resistance of the first region increases
Data Source
AI summary
A fuse structure includes a first fin pattern disposed in a field insulating layer that includes an upper surface that projects above an upper surface of the field insulating layer, a conductive pattern on the field insulating layer that crosses the first fin pattern, a first semiconductor region positioned on at least one side of the conductive pattern, and first and second contacts disposed on the conductive pattern on each side of the first fin pattern. The fuse structure may be included in a semiconductor device.